Zetex ZUMT817-25, ZUMT817-40 Datasheet
SOT323 NP N SILICON PLANAR
MEDIUM POWER TRANSISTORS
ISSUE 2 – FEBRUARY 1999
PARTMARKING DETAILS ZUMT817-25 - T7
ZUMT817-40 - T23
COMPLEMENTARY TYPES ZUMT817-25 - ZUMT807-25
ZUMT817-40 - ZUMT807-40– T7
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Collector-Base Voltage V
CBO
50 V
Collector-Emitter Voltage V
CEO
45 V
Emitter-Base Voltage V
EBO
5V
Peak Pulse Current I
CM
1A
Continuous Collector Current I
C
500 mA
Base Current I
B
100 mA
Peak Base Current I
BM
200 mA
Power Dissipation at T
amb
=25°C P
tot
330 mW
Operating and Storage Temperature Range T
j:Tstg
-55 to +150 °C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector Cut-Off
Current
I
CBO
0.1
5
A
A
V
CB
=20V, IE=0
V
CB
=20V, IE=0, T
amb
=150°C
Emitter Cut-Off Current I
EBO
10
A
V
EB
=5V, IC=0
Collector-Emitter
Saturation Voltage
V
CE(sat)
700 mV IC=500mA, IB=50mA*
Base-Emitter
Turn-on Voltage
V
BE(on)
1.2 V IC=500mA, VCE=1V*
Static Forward
Current Transfer Ratio
h
FE
100
40
600 IC=100mA, VCE=1V*
I
C
=500mA, VCE=1V*
-25 160 400 I
C
=100mA, VCE=1V*
-40 250 600 I
C
=100mA, VCE=1V*
Transition
Frequency
f
T
200 MHz IC=10mA, VCE=5V
f=35MHz
Collector-base
Capacitance
C
obo
5.0 pF IE=Ie=0, VCB=10V
f=1MHz
*Measured under pulsed conditions. Pulse width=300
s. Duty cycle 2%
ZUMT817-25
ZUMT817-40
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