Zetex ZUMT807-25, ZUMT807-40 Datasheet
SOT323 PNP SILICON PLAN AR
MEDIUM POWER TRANSISTOR
ISSUE 2 – FEBRUARY 1999
PARTMARKING DETAILS ZUMT807-25 - T8
ZUMT807-40 - T24
COMPLEMENTARY TYPES ZUMT807-25 - ZUMT817-25
ZUMT807-40 - ZUMT817-40
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Collector-Base Vo ltage V
CBO
-50 V
Collector-Emitter Vo ltage V
CEO
-45 V
Emitter-Base Voltage V
EBO
-5 V
Peak Pulse Current I
CM
-1 A
Continuous Collector Current I
C
-500 mA
Base Current I
B
-100 mA
Peak Base Current I
BM
-200 mA
Power Dissipation at T
amb
=25°C P
tot
330 mW
Operating and Storage Temperature Range T
j:Tstg
-55 to +150 °C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector Cut-Off
Current
I
CBO
-0.1
-5
A
A
V
CB
=-20V, IE=0
V
CB
=-20V, IE=0, T
amb
=150°C
Emitter Cut-Off Current I
EBO
-10
A
V
EB
=-5V, IC=0
Collector-Emitter
Saturatio n Vo ltage
V
CE(sat)
-700 mV IC=-500mA, IB=-50mA*
Base-Emitter
Turn-on Voltage
V
BE(on)
-1.2 V IC=-500mA, VCE=-1V*
Static Forward Current
Transfer Rat io
h
FE
100
40
600 IC=-100mA, VCE=-1V*
I
C
=-500mA, VCE=-1V*
-25 160 400 I
C
=-100mA, VCE=-1V*
-40 250 600 I
C
=-100mA, VCE=-1V*
Transition
Frequency
f
T
100 MHz IC=-10mA, VCE=-5V
f=35MHz
Collector-base
Capacitance
C
obo
8.0 p F IE=Ie=0, VCB=-10V
f=1MHz
*Measured under pulsed conditions. Pulse width=300
s. Duty cycle 2%
ZUMT807-25
ZUMT807-40
Loading...