Zetex ZUMT413 Datasheet
SOT323 NPN SILICON PLANAR
AVALANCHE TRANSISTOR
ISSUE 1 – DECEMBER 1998
FEATURES
* Avalanche mode operation
* 50A Peak avalanche current
* Low inductance packaging
APPLICATIONS
* Laser LED drivers
* Fast edge generation
* High speed pulse generators
PARTMARKING DETAIL - T13
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Collector-Base Voltage V
Collector-Emitter Voltage V
Emitter-Base Voltage V
Continuous Collector Current I
Peak Collector Current (25ns Pulse Width) I
Power Dissipation P
Operating and Storage Temperature Range T
CBO
CEO
EBO
C
CM
tot
j:Tstg
ZUMT413
150 V
50 V
6V
100 mA
50 A
330 mW
-55 to +150 °C
ELECTRICAL CHARACTERISTICS (at T
= 25°C unless otherwise stated).
amb
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Emitter
Breakdown Voltage
Collector-Emitter
Breakdown Voltage
Emitter-Base
Breakdown Voltage
Collector Cut-Off Current I
Emitter Cut-Off Current I
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
Current in Second
Breakdown (Pulsed)
Static Forward Current
Transfer Ratio
V
(BR)CES
V
CEO(sus)
V
(BR)EBO
CBO
EBO
V
CE(sat)
V
BE(sat)
I
USB
h
FE
150 V
=100µA
I
C
50 V IC=10mA
6V
0.1
0.1
µA
µA
I
=100µA
E
VCB=120V
VEB=4V
0.15 V IC=10mA, IB=1mA
0.8 V IC=10mA, IB=1mA
22
31
A
A
VC=110V, CCE=4.7nF*
V
=130V, CCE=4.7nF*
C
50 IC=10mA, VCE=10V
*Measured within a circuit possessing an approximate loop inductance of 12nH. The I
circuitry reflects 0.15 Ohm into the Collector-Emitter Discharge Loop
(USB)
monitor
ZUMT413
0
ELECTRICAL CHARACTERISTICS
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Emitter Inductance L
Transition Frequency f
Collector-Base
Capacitance
.
e
T
C
cb
TYPICAL CHARACTERISTICS
2.5 nH Standard SOT323 leads
150 MHz IC=10mA, VCE=5V
f=20MHz
2pFV
=10V, IE=0
CB
f=1MHz
)
ent (A
urr
anche C
val
A
-
I(
50
40
30
20
10
0
T
amb
=25°C
B
=5mA/ns
I
p.r.f.=10KHz
050
Supply Voltage (V)
VS -
CCE=2x4.7nF
CCE=4.7nF
CCE=2.2nF
CCE=1.0nF
100 150 200 25
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