SOT323 SILICON PLANAR DUAL
SCHOTTKY BARRIER DIODES
ISSUE 1 - NOVEMBER 1998 ✪
.
SERIES PAIR COMMON CATHODE
Device Type:
ZUMD70-04
Device Type:
ZUMD70-05
Partmarking Detail:
D94
Partmarking Detail:
D95
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Power Dissipation at T
amb
=25°C P
tot
330 mW
Operating and Storage Temperature Range T
j:Tstg
-55 to +150 °C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER SYMBOL MIN. MAX. UNIT CONDITIONS.
Breakdown Voltage V
BR
70 V
I
R
=10µA
Reverse Leakage Current I
R
200
nA
VR=50V
Forward Voltage V
F
410 mV IF=1mA
Forward Current I
F
15 mA VF=1V
Capacitance C
T
2.0 pF f=1MHz, VR=0
Effective Minority Lifetime
(1)
τ
100 ps f=54MHz, I
pk
= 20mA
(Krakauer Test Method)
(1) Sample Test
For typical characteristics graphs see ZC2800E datasheet.
1
3
ZUMD70-04
ZUMD70-05
1
32
1
23