Zetex ZUMD54, ZUMD54C Datasheet
SOT323 SILICON EPITAXIAL
SCHOTTKY BARRIER DIODES
ISSUE 1– DECEMBER 1998
1
1
ZUMD54
ZUMD54C
3
2
3
32
SINGLE COMMON CATHODE
ZUMD54 ZUMD54C
Partmark: D8 Partmark: D8C
FEATURES: Low V
& High Current Capability
F
APPLICATIONS: PSU, Mobile Telecomms & SCSI
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Continuous Reverse Voltage V
Forward Current I
Forward Voltage @ I
=10mA V
F
Repetitive Peak Forward Current I
Non Repetitive Forward Current t<1s I
Power Dissipation at T
=25°C P
amb
Storage Temperature Range T
JunctionTemperature ¤ T
ELECTRICAL CHARACTERISTICS (at T
R
F
F
FRM
FSM
tot
stg
j
= 25°C unless otherwise stated).
amb
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Reverse Breakdown Voltage V
Forward Voltage V
Reverse Current I
Diode Capacitance C
Reverse Recovery
Time
R
t
rr
(BR)R
F
D
¤ Dual Device; For simultaneous continuous use T
30 50 V
135
240
200
320
280
400
350
500
530
1000
1.4 2
7.5 10 pF f=1MHz,VR=1V
5 ns switched from
=100°C.
j
30 V
200 mA
400 mV
300 mA
600 mA
330 mW
-55 to +150 °C
125 °C
=10µA
I
R
mV
IF=0.1mA
mV
I
=1mA
mV
mV
mV
µA
F
=10mA
I
F
I
=30mA
F
I
=100mA
F
V
=25V
R
I
=10mA to IR=10mA
F
R
=100Ω, IR=1mA
L
1
ZUMD54
ZUMD54C
TYPICAL CHARACTERISTICS
1
100m
10m
1m
100
Forward Current IF (A)
10µ
µ
00.60.3
0.15 0.45 0.75
+125°C
+85°C
+25°C
Forward Voltage VF (V)
IF v VF Characteristics
15
10
5
0
Diode Capacitance CT (pF)
020
10
Reverse Voltage VR (V)
CT v VR Characteristics
10m
(A)
R
1m
+125°C
10µ
+85°C
+25°C
µ
1
3010 200
100µ
Reverse Current I
0.9
Reverse Voltage VR (V)
IR v VR Characteristics
330
270
180
90
0
30
0 50 100 150
TA - Ambient Temperature ( °C)
PD v TA Characteristics
PD - Power Dissipation (mW)
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