Zetex ZTX855 Datasheet

NPN SILICON PLANAR MEDIUM POWER
HIGH CURRENT TRANSISTOR

ISSUE 2  MARCH 94

FEATURES
* 150 Volt V
* 4 Amps continuous current
* Up to 10 Amps peak current
* Very low saturation voltage
*P

tot

ABSOLUTE MAXIMUM RATINGS.

PARAMETER SYMBOL VALUE UNIT

Collector-Base Voltage V

Collector-Emitter Voltage V

Emitter-Base Voltage V

Peak Pulse Current I

Continuous Collector Current I

Practical Power Dissipation* P

Power Dissipation at T

Operating and Storage Temperature Range T

*The power which can be dissipated assuming the device is mounted in a typical manner on a
P.C.B. with copper equal to 1 inch square minimum

ELECTRICAL CHARACTERISTICS (at T

PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.

Collector-Base Breakdown
Voltage

Collector-Emitter Breakdown
Voltag

Collector-Emitter Breakdown
Voltage

Emitter-Base Breakdown
Voltage

Collector Cut-Off Current I

Collector Cut-Off Current I

Emitter Cut-Off Current I

Collector-Emitter Saturation
Voltage

Base-Emitter
Saturation Voltage

CEO

= 1.2 Watt

=25°C P

amb

V

(BR)CBO

V

(BR)CER

V

(BR)CEO

V

(BR)EBO

CBO

CER

R ≤1KΩ

EBO

V

CE(sat)

V

BE(sat)

CBO

CEO

EBO

CM

C

totp

tot

:Tstg -55 to +200 °C

j

= 25°C unless otherwise stated)

amb

250 375 V

250 375 V

150 180 V IC=10mA*

68 V

50

nA

1

µA

50

nA

1

µA

10 nA VEB=6V

20
35
60
210

60
100
260

mV
mV
mV

mV

40

960 1100 mV IC=4A, IB=400mA*

ZTX855

C
B
E

E-Line

TO92 Compatible

250 V

150 V

6V

10 A

4A

1.58 W

1.2 W

=100µA

I

C

µA, RB ≤1KΩ

IC=1

=100µA

I

E

=200V

V

CB

V

=200V, T

CB

V

=200V

CB

V

=200V, T

CB

I

=100mA, IB=5mA*

C

I

=500mA, IB=50mA*

C

=1A, IB=100mA*

I

C

I

=4A, IB=400mA*

C

amb

amb

=100°C

=100°C

2-300

ZTX855

ELECTRICAL CHARACTERISTICS (at T

amb

= 25°C)

PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.

Base-Emitter
Turn-On Voltage

Static Forward
Current Transfer

V

h

BE(on)

FE

Ratio

Transition Frequency f

Output Capacitance C

Switching Times t

T

obo

on

t

off

*Measured under pulsed conditions. Pulse width=300

0.88 1 V IC=4A, VCE=5V*

100
100
35

200
200
55
10

300

I
I
I
I

90 MHz IC=100mA, VCE=10V

f=50MHz

22 pF VCB=20V, f=1MHz

66
2130

ns
ns

IC=1A, IB!=100mA
I

µs. Duty cycle ≤2%

=10mA, VCE=5V

C

=1A, VCE=5V*

C

=4A, VCE=5V*

C

=10A, VCE=5V*

C

=100mA, VCC=50V

B2

THERMAL CHARACTERISTICS

PARAMETER SYMBOL MAX. UNIT

Thermal Resistance: Junction to Ambient

Junction to Case

R

th(j-amb)

R

th(j-case)

150

50

°C/W
°C/W

)

s

tt

a
(W

­tion

ipa

iss
D

ower
P

x

a
M

4.0

3.0

2.0

1.0

-40

-20 0 20

T -Temperature (°C)

Case te

mperatu

Ambien

t t

empe

rat

ure

40 60 80 100 120 200180160140

r

e

Derating curve

150

100

50

Thermal Resistance (°C/W)

0

Maximum transient thermal impedance

0.0001

D.C.

t

1

D=t

1/tP

t

P

D=0.6

D=0.2
D=0.1

D=0.05
Single Pulse

0.001

Pulse Width (seconds)

10 10010.10.01

3-301