Zetex ZTX776 Datasheet
PNP SILICON PLANAR
MEDIUM POWER TRANSISTOR
ISSUE 1 JULY 94
FEATURES
* 200 Volt V
* 1 Amp continuous current
*P
tot
REFER TO ZTX755 FOR GRAPHS
ABSOLUTE MAXIMUM RATINGS.
PARAMET ER SYMBOL VALUE UNIT
Collector-Base Voltage V
Collector-Emitter Voltage V
Emitter-Base Voltage V
Peak Pulse Current I
Continuous Collector Current I
Power Dissipation at T
Operating and Storage Temperature Range T
= 1 Watt
CEO
derate above T
amb
=25°C
amb
=25°C
CM
C
P
CBO
CEO
EBO
tot
j:Tstg
ZTX776
C
B
E
E-Line
TO92 Compatible
-200 V
-200 V
-5 V
-2 A
-1 A
1
5.7
-55 to +200 °C
mW/ °C
W
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C).
PARAMETER SYMBOL MIN. MAX. UNIT CONDITIONS.
Collector-Base
Breakdown Voltage
Collector-Emitter
Breakdown Voltage
Emitter-Base Breakdown
Voltage
Collector Cut-Off
Current
Emitter Cut-Off Current I
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
Base-Emitter Turn-On
Voltage
Static Forward Current
Transfer Ratio
Transition
Frequency
Output Capacitance C
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
EBO
V
CE(sat)
V
BE(sat)
V
BE(on)
h
FE
f
T
obo
*Measured under pulsed conditions. Pulse width=300
-200 V
=-100µA, I
I
C
-200 V IC=-10mA, IB=0*
-5 V
=-100µA, I
I
E
-100 nA VCB=-160V, IE=0
-100 nA VEB=-4V, IC=0
-0.5
-0.5
V
V
IC=-500mA, IB=-50mA*
=-1A, IB=-200mA*
I
C
-1.1 V IC=-500mA, IB=-50mA*
-1.0 V IC=-500mA, VCE=-5V*
50
50
20
I
=-10mA, VCE=-5V
C
=-500mA, VCE=-5V*
I
C
I
=-1A, VCE=-5V*
C
30 MHz IC=-10mA, VCE=-20V
f=20MHz
20 pF VCB=-20V, f=1MHz
µs. Duty cycle ≤2%
3-270
=0
E
=0
C
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