Zetex ZTX758 Datasheet

PNP SILICON PLANAR MEDIUM POWER
HIGH VOLTAGE TRANSISTOR

ISSUE 1  APRIL 94

FEATURES
* 400 Volt V
* 0.5 Amp continuous current
*P

tot

ABSOLUTE MAXIMUM RATINGS.

PARAMETER SYMBOL VALUE UNIT

Collector-Base Voltage V

Collector-Emitter Voltage V

Emitter-Base Voltage V

Peak Pulse Current I

Continuous Collector Current I

Power Dissipation at T

Operating and Storage Temperature Range T

=1 Watt

CEO

amb

derate above 25°C

=25°C

CM

C

P

CBO

CEO

EBO

tot

j:Tstg

-55 to +200 °C

ZTX758

C
B
E

E-Line

TO92 Compatible

-400 V

-400 V

-5 V

-1 A

-500 mA

1

5.7

mW/ °C

W

ELECTRICAL CHARACTERISTICS (at T

= 25°C unless otherwise stated).

amb

PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.

Collector-Base
Breakdown Voltage

Collector-Emitter
Breakdown Voltage

Emitter-Base
Breakdown Voltage

Collector Cut-Off
Current

Collector Cut-Off
Current

Emitter Cut-Off Current I

Collector-Emitter
Saturation Voltage

Base-Emitter
Saturation Voltage

Base-Emitter
Turn On Voltage

Static Forward Current
Transfer Ratio

V

(BR)CBO

V

CEO(SUS)

V

(BR)EBO

I

CBO

I

CES

EBO

V

CE(sat)

V

BE(sat)

V

BE(on)

h

FE

-400 V

=-100µA

I

C

-400 V IC=-10mA*

-5 V

=-100µA

I

E

-100 nA VCB=-320V

-100 nA VCE=-320V

-100 nA VEB=-4V

-0.30

-0.25

-0.50

V
V
V

I

=-20mA, IB=-1mA

C

=-50mA, IB=-5mA*

I

C

I

=-100mA, IB=-10mA*

C

-0.9 V IC=-100mA, IB=-10mA*

-0.9 V IC=-100mA, VCE=-5V*

50
50
40

I

=-1mA, VCE=-5V

C

=-100mA, VCE=-5V*

I

C

=-200mA, VCE=-10V*

I

C

3-267

ZTX758

ELECTRICAL CHARACTERISTICS (at T

amb

= 25°C)

PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.

Transition
Frequency

Output Capacitance C

Switching times t

f

T

obo

on

t

off

* Measured under pulsed conditions. Pulse width=300

50 MHz IC=-20mA, VCE=-20V

f=20MHz

20 pF VCB=-20V, f=1MHz

140
2000

ns
ns

IC=-100mA, VC=-100V
I

=10mA, IB2=-20mA

B1

µs. Duty cycle ≤2%

THERMAL CHARACTERISTICS

PARAMETER SYMBOL MAX. UNIT

Thermal Resistance:Junction to Ambient

Junction to Ambient
Junction to Case

2

R

1

th(j-amb)1

R

th(j-amb)2

R

th(j-case)



 Device mounted on P.C.B. with copper equal to 1 sq. Inch minimum.

2.5

tts)

a

2.0

W

(

­n

o

1.5

issipati

1.0

D

r
we

0.5

ax Po

0

M

-40 0.0001

T -Temperature (°C)

Case temperature

Ambient temperat

ure

40 60 80 100 120 200180160140

Derating curve

200

t

1

100

Thermal Resistance (°C/W)

Single Pulse

0

0.001

Maximum transient thermal impedance

175
116

70

D=1 (D.C.)

D=t

1/tP

t

P

D=0.5

D=0.2
D=0.1

Pulse Width (seconds)

°C/W
°C/W
°C/W

10 10010.10.01-20 0 20

3-268