PNP SILICON PLANAR
MEDIUM POWER TRANSISTORS
ZTX754
ZTX755
ISSUE 2 JULY 94
FEATURES
* 150 Volt V
CEO
* 1 Amp continuous current
* Low saturation voltage
= 1 Watt
*P
tot
C
B
E
E-Line
ABSOLUTE MAXIMUM RATINGS.
TO92 Compatible
PARAMETER SYMBOL ZTX754 ZTX755 UNIT
Collector-Base Voltage V
Collector-Emitter Voltage V
Emitter-Base Voltage V
Peak Pulse Current I
Continuous Collector Current I
Power Dissipation at T
=25°C P
amb
Operating and Storage Temperature Range T
CBO
CEO
EBO
CM
C
tot
j:Tstg
-125 -150 V
-125 -150 V
-5 V
-2 A
-1 A
1W
-55 to +200 °C
ELECTRICAL CHARACTERISTICS (at T
= 25°C unless otherwise stated).
amb
PARAMETER SYMBOL ZTX754 ZTX755 UNIT CONDITIONS.
MIN. MAX. MIN. MAX.
Collector-Base
Breakdown Voltage
Collector-Emitter
Breakdown Voltage
Emitter-Base
Breakdown Voltage
Collector Cut-Off
Current
Emitter Cut-Off
Current
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
Base-Emitter Turn-On
Voltage
Static Forward
Current Transfer Ratio
Transition Frequency f
Output Capacitance C
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
V
CE(sat)
V
BE(sat)
V
BE(on)
h
FE
T
obo
-125 -150 V
=-100µA, I
I
C
-125 -150 V IC=-10mA, IB=0*
-5 -5 V
-100
-100nAnA
=-100µA, I
I
E
VCB=-100V, IE=0
V
=-125V, IE=0
CB
-100 -100 nA VEB=-3V, IC=0
-0.5
-0.5
-0.5
-0.5VV
IC=-500mA, IB=-50mA*
I
=-1A, IB=-200mA*
C
-1.1 -1.1 V IC=-500mA, IB=-50mA*
-1.0 -1.0 V IC=-500mA, VCE=-5V*
50
50
20
50
50
20
I
=-10mA, VCE=-5V
C
=-500mA, VCE=-5V*
I
C
=-1A, VCE=-5V*
I
C
30 30 MHz IC=-10mA, VCE=-20V
f=20MHz
20 20 pF VCB=-20V, f=1MHz
3-263
=0
E
=0
C
ZTX754
ZTX755
0.8
0.6
olts)
0.4
- (V
)
t
sa
(
0.2
CE
V
0
0.001
TYPICAL CHARACTERISTICS
td
tr
ts
tf
µs
µs
0.5
2.0
IC/IB=10
0.01
0.1
1
0.4
0.3
1.0
0.2
Switching time
0.1
IB1=IB2=IC/10
ts
td
tf
tr
0
0.01
0.1 1
VCE=10V
)
%
(
n
i
Ga
ised
l
- Norma
E
F
h
olts)
- (V
BE
V
IC - Collector Current (Amps)
V
100
80
60
40
20
0.001
VCE=5V
0.01
CE(sat)
v IC
1.0
0.8
olts)
0.6
- (V
)
t
sa
(
0.4
BE
V
100.1 1
0.2
IC - Collector Current (Amps)
Switching Speeds
IC/IB=10
0.001
IC - Collector Current (Amps) IC - Collector Current (Amps)
hFEv IC V
10
1.2
1.0
0.8
0.6
0.4
VCE=5V
0.0001
0.001
0.01 0.1
Collector Current (Amps)
IC -
BE(on)
V
v IC
ps)
Am
(
nt
1
e
r
Cur
r
to
c
le
l
0.1
Co
-
C
I
1
0.01
1100010 100
Single Pulse Test at T
D.C.
1s
100ms
10ms
1.0ms
300µs
CE
Collector Voltage (Volts)
V
-
Safe Operating Area
0.01
BE(sat)
ZTX754
ZT
0.1
1
v IC
=25°C
amb
5
5
7
X
3-264