Zetex ZTX750, ZTX751 Datasheet

PNP SILICON PLANAR
MEDIUM POWER TRANSISTORS

ZTX750
ZTX751

ISSUE 2  JULY 94

FEATURES
* 60 Volt V

CEO

* 2 Amp continuous current
* Low saturation voltage

= 1 Watt

*P

tot

C
B
E

E-Line

TO92 Compatible

ABSOLUTE MAXIMUM RATINGS.

PARAMETER SYMBOL ZTX750 ZTX751 UNIT

Collector-Base Voltage V

Collector-Emitter Voltage V

Emitter-Base Voltage V

Peak Pulse Current I

Continuous Collector Current I

Power Dissipation: at T

=25°C

amb

derate above 25°C

Operating and Storage Temperature Range T

ELECTRICAL CHARACTERISTICS (at T

amb

ZTX750 ZTX751

PARAMETER SYMBOL

MIN. TYP. MAX. MIN. TYP. MAX.

CBO

CEO

EBO

CM

C

P

tot

j:Tstg

= 25°C unless otherwise stated).

-60 -80 V

-45 -60 V

-5 V

-6 A

-2 A

1

5.7

mW/°C

-55 to +200 °C

UNIT CONDITIONS.

W

Collector-Base
Breakdown
Voltage

Collector-Emitter
Breakdown
Voltage

Emitter-Base
Breakdown
Voltage

Collector Cut-Off
Current

Emitter Cut-Off
Current

Collector-Emitter
Saturation Voltage

Base-Emitter
Saturation Voltage

V

(BR)CBO

V

(BR)CEO

V

(BR)EBO

I

CBO

I

EBO

V

CE(sat)

V

BE(sat)

-60 -80 V

=-100µA

I

C

-45 -60 V IC=-10mA

-5 -5 V

-0.1

-0.1

-10

-10

-0.1 -0.1

-0.15

-0.28

-0.3

-0.5

-0.15

-0.28

-0.3

-0.5VV

=-100µA

I

E

V

µA

CB

V

µA

CB

V

µA

CB

µA

VCB=-60V,T

V

µA

EB

IC=-1A, IB=-100mA

=-2A, IB=-200mA

I

C

=-45V
=-60V
=-45V,T

=-4V

-0.9 -1.25 -0.9 -1.25 V IC=-1A, IB=-100mA

3-257

amb

amb

=100°C

=100°C

ZTX750
ZTX751

ELECTRICAL CHARACTERISTICS (at T

= 25°C unless otherwise stated).

amb

ZTX750 ZTX751

PARAMETER SYMBOL

UNIT CONDITIONS.

MIN. TYP. MAX. MIN. TYP. MAX.

Transition
Frequency

Switching Times t

Output
Capacitance

f

T

on

t

off

C

obo

*Measured under pulsed conditions. Pulse width=300

100 140 100 140 MHz IC=-100mA, VCE=-5V

f=100MHz

40 40 ns IC=-500mA, VCC=-10V

I

=-50mA

450 450 ns

B1=IB2

30 30 pF VCB=10V f=1MHz

µs. Duty cycle ≤ 2%

THERMAL CHARACTERISTICS

PARAMETER SYMBOL MAX. UNIT

Thermal Resistance:Junction to Ambient

Junction to Ambient
Junction to Case

2

1

R

th(j-amb)1

R

th(j-amb)2

R

th(j-case)



 Device mounted on P.C.B. with copper equal to 1 sq. Inch minimum.

175
116

70

°C/W
°C/W
°C/W

2.5

tts)

a

2.0

W

(

­n

o

1.5

issipati

1.0

D

r
we

0.5

ax Po

0

M

-40 0.0001

T -Temperature (°C)

Case temperature

Ambient temperat

ure

40 60 80 100 120 200180160140

Derating curve

3-258

200

100

Thermal Resistance (°C/W)

D=1 (D.C.)

t

1

D=t

1/tP

t

P

D=0.5

D=0.2
D=0.1

Single Pulse

0

0.001

Pulse Width (seconds)

Maximum transient thermal impedance

10 10010.10.01-20 0 20