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NPN SILICON PLANAR
MEDIUM POWER TRANSISTORS
ISSUE 2 JULY 94
ZTX654
ZTX655
FEATURES
* 150 Volt V
CEO
* 1 Amp continuous current
* Low saturation voltage
= 1 Watt
*P
tot
C
B
E
E-Line
ABSOLUTE MAXIMUM RATINGS.
TO92 Compatible
PARAMETER SYMBOL ZTX654 ZTX655 UNIT
Collector-Base Voltage V
Collector-Emitter Voltage V
Emitter-Base Voltage V
Peak Pulse Current I
Continuous Collector Current I
Power Dissipation at T
=25°C P
amb
Operating and Storage Temperature
Range
ELECTRICAL CHARACTERISTICS (at T
CBO
CEO
EBO
CM
C
tot
T
j:Tstg
= 25°C unless otherwise stated).
amb
125 150 V
125 150 V
5V
2A
1A
1W
-55 to +200 °C
ZTX654 ZTX655
PARAMETER SYMBOL
Collector-Base
Breakdown Voltage
Collector-Emitter
Breakdown Voltage
Emitter-Base
Breakdown Voltage
Collector Cut-Off
Current
Emitter Cut-Off
Current
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
Base-Emitter
Turn-On Voltage
Static Forward
Current Transfer
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
V
CE(sat)
V
BE(sat)
V
BE(on)
h
FE
Ratio
Transition
Frequency
Output Capacitance C
f
T
obo
MIN. MAX. MIN. MAX.
125 150 V
125 150 V IC=10mA, IB=0*
55V
100
100 100 nA VEB=3V, IC=0
0.5
0.5
1.1 1.1 V IC=500mA, IB=50mA*
1.0 1.0 V IC=500mA, VCE=5V*
50
50
20
50
50
20
30 30 MHz IC=10mA, VCE=20V
20 20 pF VCB=20V, f=1MHz
UNIT CONDITIONS.
100nAnA
0.5
0.5VV
=100µA, I
I
C
=100µA, I
I
E
=0
E
=0
C
VCB=100V, IE=0
V
=125V, IE=0
CB
IC=500mA, IB=50mA*
=1A, IB=200mA*
I
C
IC=10mA, VCE=5V
=500mA, VCE=5V*
I
C
I
=1A, VCE=5V*
C
f=20MHz
3-225
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ZTX654
ZTX655
0.18
olts)
0.10
- (V
)
t
(sa
CE
V
0
TYPICAL CHARACTERISTICS
IC/IB=10
0.01
IC - Collector Current (Amps)
CE(sat)
V
0.1
v IC
100
)
80
60
Gain (%
d
se
i
40
mal
r
o
20
N
-
FE
h
101
0
0.01
VCE=5V
100.1 1
IC - Collector Current (Amps)
hFEv IC
olts)
V
(
-
(sat)
E
B
V
1.2
1.0
0.8
0.6
0.4
10
IC/IB=10
0.01
Collector Current (Amps)
IC -
Single Pulse Test at T
)
Amps
(
1.0
nt
e
r
r
u
D.C.
1s
C
r
100ms
10ms
to
c
le
l
o
C
-
C
I
1.0ms
0.1
300µs
0.01
1100010 100
VCE - Collector Voltage (Volts)
Safe Operating Area
BE(sat)
V
Z
T
v IC
X
6
5
4
1.2
1.0
VCE=5V
olts)
0.8
- (V
BE
V
0.6
100.1 1
0.4
0.01
100.1 1
IC - Collector Current (Amps)
BE(on)
V
v IC
=25°C
amb
ZTX655
e
m
i
t
Switching
td
tr
tf
ts
µs
0.7
0.6
td
0.5
0.4
0.3
tf
0.2
0.1
tr
0
0.01
0.1
IB1=IB2=IC/10
VCE=10V
ts
µs
3.0
2.0
1.0
1
IC - Collector Current (Amps)
Switching Speeds
3-226