Zetex ZTX654, ZTX655 Datasheet

NPN SILICON PLANAR
MEDIUM POWER TRANSISTORS

ISSUE 2  JULY 94

ZTX654
ZTX655

FEATURES
* 150 Volt V

CEO

* 1 Amp continuous current
* Low saturation voltage

= 1 Watt

*P

tot

C
B
E

E-Line

ABSOLUTE MAXIMUM RATINGS.

TO92 Compatible

PARAMETER SYMBOL ZTX654 ZTX655 UNIT

Collector-Base Voltage V

Collector-Emitter Voltage V

Emitter-Base Voltage V

Peak Pulse Current I

Continuous Collector Current I

Power Dissipation at T

=25°C P

amb

Operating and Storage Temperature
Range

ELECTRICAL CHARACTERISTICS (at T

CBO

CEO

EBO

CM

C

tot

T

j:Tstg

= 25°C unless otherwise stated).

amb

125 150 V

125 150 V

5V

2A

1A

1W

-55 to +200 °C

ZTX654 ZTX655

PARAMETER SYMBOL

Collector-Base
Breakdown Voltage

Collector-Emitter
Breakdown Voltage

Emitter-Base
Breakdown Voltage

Collector Cut-Off
Current

Emitter Cut-Off
Current

Collector-Emitter
Saturation Voltage

Base-Emitter
Saturation Voltage

Base-Emitter
Turn-On Voltage

Static Forward
Current Transfer

V

(BR)CBO

V

(BR)CEO

V

(BR)EBO

I

CBO

I

EBO

V

CE(sat)

V

BE(sat)

V

BE(on)

h

FE

Ratio

Transition
Frequency

Output Capacitance C

f

T

obo

MIN. MAX. MIN. MAX.

125 150 V

125 150 V IC=10mA, IB=0*

55V

100

100 100 nA VEB=3V, IC=0

0.5

0.5

1.1 1.1 V IC=500mA, IB=50mA*

1.0 1.0 V IC=500mA, VCE=5V*

50
50
20

50
50
20

30 30 MHz IC=10mA, VCE=20V

20 20 pF VCB=20V, f=1MHz

UNIT CONDITIONS.

100nAnA

0.5

0.5VV

=100µA, I

I

C

=100µA, I

I

E

=0

E

=0

C

VCB=100V, IE=0
V

=125V, IE=0

CB

IC=500mA, IB=50mA*

=1A, IB=200mA*

I

C

IC=10mA, VCE=5V

=500mA, VCE=5V*

I

C

I

=1A, VCE=5V*

C

f=20MHz

3-225

ZTX654
ZTX655

0.18

olts)

0.10

- (V

)

t
(sa
CE

V

0

TYPICAL CHARACTERISTICS

IC/IB=10

0.01

IC - Collector Current (Amps)

CE(sat)

V

0.1

v IC

100

)

80

60

Gain (%

d

se

i

40

mal

r

o

20

N

-

FE

h

101

0

0.01

VCE=5V

100.1 1

IC - Collector Current (Amps)

hFEv IC

olts)

V

(

-

(sat)
E

B

V

1.2

1.0

0.8

0.6

0.4

10

IC/IB=10

0.01

Collector Current (Amps)

IC -

Single Pulse Test at T

)

Amps

(

1.0

nt

e

r

r

u

D.C.
1s

C

r

100ms
10ms

to

c
le

l

o
C

-

C

I

1.0ms

0.1

300µs

0.01
1100010 100

VCE - Collector Voltage (Volts)

Safe Operating Area

BE(sat)

V

Z

T

v IC

X

6

5

4

1.2

1.0

VCE=5V

olts)

0.8

- (V

BE

V

0.6

100.1 1

0.4

0.01

100.1 1

IC - Collector Current (Amps)

BE(on)

V

v IC

=25°C

amb

ZTX655

e
m

i

t

Switching

td
tr
tf

ts

µs

0.7

0.6

td

0.5

0.4

0.3
tf

0.2

0.1

tr

0

0.01

0.1

IB1=IB2=IC/10

VCE=10V

ts
µs

3.0

2.0

1.0

1

IC - Collector Current (Amps)

Switching Speeds

3-226