Zetex ZTX650, ZTX651 Datasheet

NPN SILICON PLANAR
MEDIUM POWER TRANSISTORS

ZTX650
ZTX651

ISSUE 2  JULY 94

FEATURES
* 60 Volt V

CEO

* 2 Amp continuous current
* Low saturation voltage

=1 Watt

*P

tot

C
B
E

E-Line

ABSOLUTE MAXIMUM RATINGS.

TO92 Compatible

PARAMETER SYMBOL ZTX650 ZTX651 UNIT

Collector-Base Voltage V

Collector-Emitter Voltage V

Emitter-Base Voltage V

Peak Pulse Current I

Continuous Collector Current I

Power Dissipation at T

=25°C

amb

derate above 25°C

Operating and Storage Temperature Range T

ELECTRICAL CHARACTERISTICS (at T

amb

CBO

CEO

EBO

CM

C

P

tot

j:Tstg

= 25°C unless otherwise stated).

60 80 V

45 60 V

5V

6A

2A

1

5.7

mW/°C

-55 to +200 °C

ZTX650 ZTX651

PARAMETER SYMBOL

MIN. TYP. MAX. MIN. TYP. MAX.

UNIT CONDITIONS.

W

Collector-Base
Breakdown Voltage

Collector-Emitter
Breakdown Voltage

Emitter-Base
Breakdown Voltage

Collector Cut-Off
Current

Emitter Cut-Off
Current

Collector-Emitter
Saturation Voltage

Base-Emitter
Saturation Voltage

Base-Emitter
Turn-On Voltage

V

(BR)CBO

V

(BR)CEO

V

(BR)EBO

I

CBO

I

EBO

V

CE(sat)

V

BE(sat)

V

BE(on)

60 80 V

=100µA

I

C

45 60 V IC=10mA*

55V

0.1

10

0.1 0.1

0.12

0.3

0.23

0.5

0.12

0.23

0.1

10

0.3

0.5VV

µA
µA
µA
µA

µA

=100µA

I

E

V

=45V

CB

=60V

V

CB

V

=45V,T

CB

VCB=60V,T

V

amb
amb

=4V

EB

IC=1A, IB=100mA*

=2A, IB=200mA*

I

C

0.9 1.25 0.9 1.25 V IC=1A, IB=100mA*

0.8 1 0.8 1 V IC=1A, VCE=2V*

3-219

=100°C
=100°C

ZTX650
ZTX651

PARAMETER SYMBOL

UNIT CONDITIONS.

MIN. TYP. MAX. MIN. TYP. MAX.

ZTX650 ZTX651

Transition
Frequency

Switching Times t

Output Capacitance C

f

T

on

t

off

obo

*Measured under pulsed conditions. Pulse width=300

140 175 140 175 MHz IC=100mA, VCE=5V

f=100MHz

45 45 ns IC=500mA, VCC=10V

=50mA

I

B1=IB2

800 800 ns

30 30 pF VCB=10V f=1MHz

µs. Duty cycle ≤ 2%

THERMAL CHARACTERISTICS

PARAMETER SYMBOL MAX. UNIT

Thermal Resistance:Junction to Ambient

Junction to Ambient
Junction to Case

2

1

R

th(j-amb)1

R

th(j-amb)2

R

th(j-case)



 Device mounted on P.C.B. with copper equal to 1 sq. Inch minimum.

175
116

70

°C/W
°C/W
°C/W

2.5

tts)

a

2.0

W

(

­n

o

1.5

issipati

1.0

D

r
we

0.5

ax Po

0

M

-40 0.0001

T -Temperature (°C)

Case temperature

Ambient temperat

ure

40 60 80 100 120 200180160140

Derating curve

3-220

200

100

Thermal Resistance (°C/W)

D=1 (D.C.)

t

1

D=t

1/tP

t

P

D=0.5

D=0.2
D=0.1

Single Pulse

0

0.001

Pulse Width (seconds)

Maximum transient thermal impedance

10 10010.10.01-20 0 20