Zetex ZTX600, ZTX601 Datasheet
NPN SILICON PLANAR MEDIUM POWER
DARLINGTON TRANSISTORS
ZTX600
ZTX601
ISSUE 2 JUNE 94
FEATURES
* 160 Volt V
CEO
* 1 Amp continuous current
* Gain of 5K at I
= 1 Watt
*P
tot
=1 Amp
C
C
B
E
E-Line
ABSOLUTE MAXIMUM RATINGS.
TO92 Compatible
PARAMETER SYMBOL ZTX600 ZTX601 UNIT
Collector-Base Voltage V
Collector-Emitter Voltage V
Emitter-Base Voltage V
Peak Pulse Current I
Continuous Collector Current I
Power Dissipation at T
=25°C
amb
derate above 25°C
Operating and Storage Temperature Range T
CM
C
P
CBO
CEO
EBO
tot
j:Tstg
160 180 V
140 160 V
10 V
4A
1A
1
5.7
mW/ °C
-55 to +200 °C
W
ELECTRICAL CHARACTERISTICS (at T
= 25°C unless otherwise stated).
amb
PARAMETER SYMBOL ZTX600 ZTX601 UNIT CONDITIONS.
MIN. TYP. MAX. MIN. TYP. MAX.
Collector-Base
Breakdown Voltage
Collector-Emitter
Breakdown Voltage
Emitter-Base
Breakdown Voltage
Collector Cut-Off
Current
Emitter Cut-Off
Current
Colllector-Emitter
Cut-Off Current
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
Base-Emitter
Turn-On Voltage
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
I
CES
V
CE(sat)
V
BE(sat)
V
BE(on)
160 180 V
=100µA
I
C
140 160 V IC=10mA*
10 10 V
0.01
0.01
10
10
0.1 0.1
10
10
0.75
0.85
1.1
1.2
0.75
0.85
1.1
1.2VV
µA
µA
µA
µA
µA
µA
µA
=100µA
I
E
V
=140V
CB
=160V
V
CB
V
=140V,T
CB
VCB=160V,T
=8V
V
EB
V
=140V
CES
=160V
V
CES
IC=0.5A, IB=5mA*
=1A, IB=10mA*
I
C
1.7 1.9 1.7 1.9 V IC=1A, IB=10mA*
1.5 1.7 1.5 1.7 V IC=1A, VCE=5V*
3-206
=100°C
a
=100°C
a
ZTX600
ZTX601
ELECTRICAL CHARACTERISTICS (at T
= 25°C unless otherwise stated).
amb
PARAMETER SYMBOL ZTX600 ZTX601 UNIT CONDITIONS.
MIN. TYP. MAX. MIN. TYP. MAX.
Static Forward
Current Transfer
h
FE
Ratio
Group A
Group B
Transition
Frequency
Input Capacitance C
Output
Capacitance
Switching Times t
f
T
ibo
C
obo
on
t
off
*Measured under pulsed conditions. Pulse width=300
1.0
0.8
0.6
0.4
1K
2K
1K
1K
2K
1K
5K
10K
5K
100K1K2K
1K
2K
5K3K20K1K2K
1K
10K
20K
100K5K10K
10K
5K
100K
2K
5K3K20K
10K
20K
100K
10K
150 250 150 250 MHz IC=100mA,
60 90 60 90 pF VEB=0.5V, f=1MHz
10 15 10 15 pF VCE=10V, f=1MHz
RS= 50K
RS= 1M
Ω
RS=
∞
DC Conditions
0.75 0.75
2.2 2.2
µs. Duty cycle ≤2%
RS= 5K
Ω
Ω
µs
µs
IC=50mA, VCE=10V*
=0.5A, VCE=10V*
I
C
I
=1A, VCE=10V*
C
I
=50mA, VCE=10V*
C
I
=0.5A, VCE=10V*
C
=1A, VCE=10V*
I
C
I
=50mA, VCE=10V*
C
I
=0.5A, VCE=10V*
C
=1A, VCE=10V*
I
C
V
=10V f=20MHz
CE
I
=0.5A, VCE=10V
C
=0.5mA
I
B1=IB2
0.2
0
Maximum Power Dissipation (W)
1 10 100
V
- Collector-Emitter Voltage (Volts)
CE
200
Voltage Derating Graph
The maximum permissible operational temperature can be obtained from this graph using the
following equation
T
amb(max
= Maximum operating ambient temperature
T
amb(max )
Power (max )
=
)
Power(max) = Maximum power dissipation figure, obtained from the above graph for a given V
and source resistance (RS)
Power(actual)= Actual power dissipation in users circuit
− Power (act )
0.0057
3-207
+25° C
CE
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