Zetex ZTX452, ZTX453 Datasheet
NPN SILICON PLANAR
MEDIUM POWER TRANSISTORS
ISSUE 2 MARCH 1994
ZTX452
ZTX453
FEATURES
* 100 Volt V
CEO
* 1 Amp continuous current
= 1 Watt
*P
tot
C
B
E
E-Line
TO92 Compatible
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL ZTX452 ZTX453 UNIT
Collector-Base Voltage V
Collector-Emitter Voltage V
Emitter-Base Voltage V
Peak Pulse Current I
Continuous Collector Current I
Power Dissipation at T
=25°C P
amb
Operating and Storage Temperature Range T
CBO
CEO
EBO
CM
C
tot
j:Tstg
100 120 V
80 100 V
5V
2A
1A
1W
-55 to +200 °C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C).
PARAMETER SYMBOL ZTX452 ZTX453 UNIT CONDITIONS.
MIN. MAX. MIN. MAX.
Collector-Base
Breakdown Voltage
Collector-Emitter
Sustaining Voltage
Emitter-Base
Breakdown Voltage
Collector Cut-Off
Current
Emitter Cut-Off
Current
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
Static Forward
Current Transfer
Ratio
Transition
Frequency
Output Capacitance C
V
(BR)CBO
V
CEO(sus)
V
(BR)EBO
I
CBO
I
EBO
V
CE(sat)
V
BE(sat)
h
FE
f
T
obo
100 120 V
=100µA
I
C
80 100 V IC=10mA*
55V
0.1
0.1 0.1
0.1
µA
µA
µA
=100µA
I
E
V
=80V
CB
=100V
V
CB
V
=4V
EB
0.7 0.7 V IC=150mA, IB=15mA*
1.3 1.3 V IC=150mA, IB=15mA*
4010150 4010200 IC=150mA, VCE=10V*
=1A, VCE=10V*
I
C
150 150 MHz IC=50mA, VCE=10V
f=100MHz
15 15 pF VCB=10V, f=1MHz
3-177
ZTX452
ZTX453
TYPICAL CHARACTERISTICS
0.8
0.6
olts)
- (V
)
t
0.4
sa
(
CE
V
0.2
0
0.01
IC/IB=10
0.1
IC - Collector Current (Amps)
CE(sat)
V
2.2
2.0
1.8
1.6
olts)
- (V
at)
s
(
BE
V
1.4
1.2
1.0
0.8
0.6
0.4
0.01
IC/IB=10
0.1
IC - Collector Current (Amps)
BE(sat)
V
10
Single Pulse Test at T
ps)
Am
t (
n
1
e
r
Cur
r
to
c
le
l
- Co
C
I
D.C.
1s
100ms
10ms
1.0ms
0.1
300µs
100µs
0.01
0.1 100110
CE
Collector Voltage (Volts)
V
-
Safe Operating Area
v IC
v IC
100
)
80
in (%
a
G
60
40
20
- Normalised
E
F
h
1
10
0.001
VCE=10V
0.01
Collector Current (Amps)
IC -
100.1 1
hFEv IC
1.4
1.2
1.0
olts)
V
(
-
E
B
0.8
V
0.6
1
=25°C
amb
ZTX452
ZTX453
10
VCE=10V
0.001
0.01
Collector Current (Amps)
IC -
BE(on)
V
v IC
100.1 1
3-178
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