Zetex ZTX325 Datasheet

NPN SILICON PLANAR RF TRANSISTOR
ISSUE 2  MARCH 94
FEATURES * High f * Low noise < 5dB at 500MHz * Power output at 500MHz >175mW
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Collector-Base Voltage V
Collector-Emitter Voltage V
Emitter-Base Voltage V
Mean Collector Current (Averaged over 100
Collector Current I
Power Dissipation at T
Operating and Storage Temperature Range T
, 1.3GHz
T
µs)
=25°C P
amb
CBO
CEO
EBO
I
25 mA
AV
CM
tot
j:Tstg
-55 to +200 °C
ZTX325
C B E
E-Line
TO92 Compatible
30 V
15 V
2.5 V
50 mA
350 mW
ELECTRICAL CHARACTERISTICS (at T
= 25°C unless otherwise stated).
amb
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Emitter Sustaining Voltage
Emitter-Base Breakdown Voltage
Collector Cut-Off Current I
Emitter Cut-Off Current I
Static Forward Current Transfer Ratio
Transition Frequency f
Capacitance, Collector Depletion Layer
Capacitance, Emitter Depletion Layer
Feedback Capacitance -C
Feedback Time Constant r
V
CEO(SUS)
V
(BR)EBO
CBO
CES
h
FE
T
C
TC
C
TE
re
bbCbc
15 V IC=10mA, IB=0
5V
=10µA, I
I
E
10 nA VCB=15V, IE=0
V
µA
=15V, VBE=0
CE
IC=2mA, VCE=1V*
=25mA, VCE=1V*
I
C
GHz
IC=2mA, VCE=5V, f=400MHz
GHz
I
=25mA, VCE=5V, f=400MHz
C
25 20
1.0
1.3
10
150 125
1.5 pF VCB=10V, IE=Ie=0, f=1MHz
2.0 pF VEB=0.5V, IC=Ic=0, f=1MHz
0.85 pF VCE=5V, IC=2mA, f=1MHz
2.0 12 ps VCB=5V, -IE=2mA, f=10.7MHz
3-161
=0
C
ZTX325
ELECTRICAL CHARACTERISTICS
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Noise Figure N 5.0 dB f=500MHz, V
=50
R
S
Intermodulation Distortion
Output Power
=25°C)*
(at T
case
d
im
P
O
-53 dB IC=14mA, VCE=6V, f=217MHz =100mV, R
V
0
f
=183MHz, f2=200MHz
1
175 mW VCE=13.5V, IC=22.5mA
P
=25mW, f=500MHz
in
=5V, IC=2mA,
CE
=37.5,
L
*It is essential that care be taken to reduce steady state current when no h.f. signal is applied.
TYPICAL CHARACTERISTICS
80
3
2
- (GHz)
T
f
1
0
f=400MHz
110
Collector Current (mA)
IC -
f
T
v IC
VCE=10V
VCE=5V
1000.1
1000
n
i
60
Ga ised
l
40
- Norma
20
E F
h
1
µ
10µ
IC - Collector Current (A)
VCE=10V
100
µ
hFEv IC
10m
1m
100m
10
f=1MHz
VCE - (V)
20
30
2.0
)
F
p
1.5
(
-
RE
1.0
C
0.5
0
CREv VCE
3-162
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