Zetex ZTX320, ZTX321, ZTX322, ZTX323 Datasheet
NPN SILICON PLANAR
HIGH SPEED SWITCHING TRANSISTORS
ZTX320 ZTX321
ZTX322 ZTX323
ISSUE 3 APRIL 94
FEATURES
* 15 Volt V
CEO
*fT=600 MHz
APPLICATIONS
* VHF/UHF operation
C
B
E
E-Line
TO92 Compatible
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Collector-Base Voltage V
Collector-Emitter Voltage V
Emitter-Base Voltage V
Base Current I
Continuous Collector Current I
Power Dissipation at T
=25°C P
amb
Operating and Storage Temperature Range T
CBO
CEO
EBO
100 mA
B
C
tot
j:Tstg
30 V
15 V
3V
500 mA
300 mW
-55 to +175 °C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C).
PARAMETER SYMBOL MIN. MAX. UNIT CONDITIONS.
Collector-Base Breakdown Voltage V
Collector-Emitter Sustaining Voltage V
Emitter-Base Breakdown Voltage V
Collector Cut-Off Current I
Emitter Cut-Off Current I
Collector-Emitter
Saturation Voltage
ZTX320, ZTX322
ZTX323
(BR)CBO
CEO(SUS)
(BR)EBO
CBO
EBO
V
CE(sat)
ZTX321
Base-Emitter
Saturation Voltage
ZTX320, ZTX322
ZTX323
V
BE(sat)
ZTX321
Static Forward
Current Transfer
Ratio
ZTX320, ZTX321
ZTX322
ZTX323
Output Capacitance C
Input Capacitance C
Transition Frequency at f=100MHz f
h
FE
obo
ibo
T
Noise Figure N 6 dB I
Power Gain g
pe
30 V
I
=10µA, I
C
15 V IC=10mA, IB=0
3V
20
20
100
0.01
0.2
0.4
0.4
0.4
1.0
1.0
1.0
300
150
300
µA
µA
V
V
V
V
V
V
=10µA, I
I
E
V
=15V, IE=0
CB
V
=2V, IC=0
EB
I
=10mA, IB=1mA
C
I
=10mA, IB=1mA
C
=3mA, IB=0.3mA
I
C
I
=10mA, IB=1mA
C
=10mA, IB=1mA
I
C
I
=3mA, IB=0.3mA
C
I
=3mA, VCE=1V
C
I
=3mA, VCE=1V
C
=3mA, VCE=1V
I
C
1.7 pF VCB=10V, f=1MHz
1.6 pF VEB=0.5V, f=1MHz
600
400
typical
15
MHz
IC=4mA, VCE=10V
MHz
=30mA, VCE=10V
I
C
=1mA, VCE=6V
E
=400Ω, f=60MHz
R
S
dB IC=6mA, VCB=12V
f=200MHz
3-159
=0
E
=0
C
ZTX320 ZTX321
ZTX322 ZTX323
TYPICAL CHARACTERISTICS
1000
800
600
Hz
M
-
T
f
400
200
0
0 5 10 15 20 25
VCE=10V
f=100MHz
IC (mA)
C
fTv I
PD - Power Dissipation (Watts)
0.4
0.3
0.2
0.1
0
-60 -20 20 60 100 140 1800
T - Temperature (°C)
Derating Curve
3-160
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