Zetex ZTX1151A Datasheet
PNP SILICON PLANAR MEDIUM POWER
HIGH GAIN TRANSISTOR
ISSUE 1 - JANUARY 1997
FEATURES
*V
* 3 Amp Continuous Current
* 5 Amp Pulse Current
* Low Saturation voltage
* High Gain
ABSOLUTE MAXIMUM RATINGS.
= -40V
CEO
PARAMETER SYMBOL VALUE UNIT
Collector-Base Voltage V
Collector-Emitter Voltage V
Emitter-Base Voltage V
Peak Pulse Current I
Continuous Collector Current I
Base Current I
Power Dissipation at T
=25°C P
amb
Operating and Storage Temperature
Range
CM
C
B
T
CBO
CEO
EBO
tot
j:Tstg
-55 to +200 °C
ZTX1151A
C
B
E
E-Line
TO92 Compatible
-45 V
-40 V
-5 V
-5 A
-3 A
-500 mA
1W
ZTX1151A
ELECTRICAL CHARACTERISTICS (at T
PARAMETER SYMBOL
Collector-Base
Breakdown Voltage
Collector-Emitter
Breakdown Voltage
Collector-Emitter
Breakdown Voltage
Collector-Emitter
Breakdown Voltage
Emitter-Base Breakdown
Voltage
Collector Cut-Off Current I
Emitter Cut-Off Current I
Collector Emitter Cut-Off
Current
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
Base-Emitter Turn-On
Voltage
Static Forward Current
Transfer Ratio
Transition Frequency f
Output Capacitance C
Switching Times t
V
(BR)CBO
V
(BR)CES
V
(BR)CEO
V
(BR)CEV
V
(BR)EBO
CBO
EBO
I
CES
V
CE(sat)
V
BE(sat)
V
BE(on)
h
FE
T
cb
on
MIN. TYP. MAX.
-45 -95 V
-40 -90 V
-40 -85 V IC=-10mA
-40 -90 V
-5 -8.5 V
270
250
180
100
= 25°C unless otherwise stated).
amb
VALUE
UNIT CONDITIONS.
I
=-100µA
C
I
=-100µA
C
I
=-100µA, VEB=+1V
C
I
=-100µA
E
-0.3 -100 nA VCB=-36V
-0.3 -100 nA VEB=-4V
-0.3 -100 nA VCE=-32V
-60
-115
-135
-160
-180
-90
-170
-210
-230
-240
mV
mV
mV
mV
mV
IC=-0.1A, IB=-1.0mA*
I
=-0.5A, IB=-5mA*
C
I
=-1A, IB=-20mA*
C
I
=-1.8A, IB=-70mA*
C
I
=-3A, IB=-250mA*
C
-950 -1050 mV IC=-3A, IB=-250mA*
-815 -950 mV IC=-3A, VCE=-2V*
450
400
300
190
40
800
IC=-10mA, VCE=-2V*
I
=-0.5A, VCE=-2V*
C
I
=-2A, VCE=-2V*
C
I
=-3A, VCE=-2V*
C
I
=-5A, VCE=-2V*
C
145 MHz IC=-50mA, VCE=-10V
f=50MHz
40 pF VCB=-10V, f=1MHz
170 ns IC=-2A, IB=-20mA,
V
=-30V
CC
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