Zetex ZTX1056A Datasheet
NPN SILICON PLANAR MEDIUM POWER
HIGH GAIN TRANSISTOR
ISSUE 3 JANUARY 1995
FEATURES
*V
* 3 Amp Continuous Current
* 6 Amp Pulse Current
* Low Saturation Voltage
ABSOLUTE MAXIMUM RATINGS.
=160V
CEO
PARAMETER SYMBOL VALUE UNIT
Collector-Base Voltage V
Collector-Emitter Voltage V
Emitter-Base Voltage V
Peak Pulse Current I
Continuous Collector Current I
Base Current I
Power Dissipation at T
=25°C P
amb
Operating and Storage Temperature
Range
CM
C
B
T
CBO
CEO
EBO
tot
j:Tstg
-55 to +200 °C
ZTX1056A
C
B
E
E-Line
TO92 Compatible
200 V
160 V
5V
6A
3A
500 mA
1W
ZTX1056A
ELECTRICAL CHARACTERISTICS (at T
= 25°C unless otherwise stated).
amb
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base
Breakdown Voltage
Collector-Emitter
Breakdown Voltage
Collector-Emitter
Breakdown Voltage
Collector-Emitter
Breakdown Voltage
Emitter-Base Breakdown
Voltage
Collector Cut-Off Current I
Emitter Cut-Off Current I
Collector Emitter Cut-Off
Current
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
Base-Emitter Turn-On
Voltage
Static Forward Current
Transfer Ratio
Transition Frequency f
Output Capacitance C
Switching Times t
V
(BR)CBO
V
CES
V
CEO
V
CEV
V
(BR)EBO
CBO
EBO
I
CES
V
CE(sat)
V
BE(sat)
V
BE(on)
h
FE
T
obo
on
t
off
200 310 V
200 310 V
I
=100µA
C
IC=100µA
160 190 V IC=10mA
200 310 V
5 8.8 V
IC=100µA, V
I
=100µA
E
0.3 10 nA VCB=150V
0.3 10 nA VEB=4V
0.3 10 nA VCES=150V
25
60
mV
IC=0.1A, IB=5mA*
95
175
220
140
250
300
mV
mV
mV
=1A, IB=50mA*
I
C
I
=2A, IB=100mA*
C
=3A, IB=200mA*
I
C
950 1050 mV IC=3A, IB=200mA*
860 950 mV IC=3A, VCE=10V*
275
300
250
60
30
420
450
400
120
50
15
1200
IC=10mA, VCE=10V*
I
=0.5A, VCE=10V*
C
I
=1A, VCE=10V*
C
=2A, VCE=10V*
I
C
=3A, VCE=10V*
I
C
I
=6A, VCE=10V*
C
120 MHz IC=50mA, VCE=10V
f=100MHz
14 25 pF VCB=10V, f=1MHz
110 ns IC=1A, IB=10mA, VCC=50V
2450 ns
I
C
V
CC
=1A, I
=50V
=±10mA,
B
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%
=1V
EB
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