Zetex ZTX1049A Datasheet
NPN SILICON PLANAR MEDIUM POWER
HIGH GAIN TRANSISTOR
ISSUE 1 JUNE 1995
FEATURES
*V
* Very low saturation voltages
*High Gain
* 20 Amps pulse current
APPLICATIONS
* LCD Backlight converters
* Emergency lighting
* DC-DC converters
ABSOLUTE MAXIMUM RATINGS.
= 80V
CEV
PARAMETER SYMBOL VALUE UNIT
Collector-Base Voltage V
Collector-Emitter Voltage V
Emitter-Base Voltage V
Peak Pulse Current I
Continuous Collector Current I
Base Current I
Power Dissipation at T
=25°C P
amb
Operating and Storage Temperature
Range
CM
C
B
T
CBO
CEO
EBO
tot
j:Tstg
-55 to +200 °C
ZTX1049A
C
B
E
E-Line
TO92 Compatible
80 V
25 V
5V
20 A
4A
500 mA
1W
ZTX1049A
ELECTRICAL CHARACTERISTICS (at T
= 25°C unless otherwise stated).
amb
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base Breakdown
Voltage
Collector-Emitter
Breakdown Voltage
Collector-Emitter
Breakdown Voltage
Collector-Emitter
Breakdown Voltage
Emitter-Base Breakdown
Voltage
Collector Cut-Off Current I
Emitter Cut-Off Current I
Collector Emitter Cut-Off
Current
Collector-Emitter Saturation
Voltage
Base-Emitter
Saturation Voltage
V
(BR)CBO
V
CES
V
CEO
V
CEV
V
(BR)EBO
CBO
EBO
I
CES
V
CE(sat)
V
BE(sat)
80 120 V
80 120 V
I
=100µA
C
IC=100µA
25 35 V IC=10mA
80 120 V
5 8.75 V
IC=100µA, V
=100µA
I
E
0.3 10 nA VCB=50V
0.3 10 nA VEB=4V
0.3 10 nA VCES=50V
30
60
125
155
45
80
180
220
mV
mV
mV
mV
IC=0.5A, IB=10mA*
I
=1A, IB=10mA*
C
I
=2A, IB=10mA*
C
I
=4A, IB=50mA*
C
890 950 mV IC=4A, IB=50mA*
=1V
EB
Base-Emitter Turn-On
Voltage
Static Forward Current
Transfer Ratio
Transition Frequency f
Output Capacitance C
Turn - On Time t
Turn -Off Time t
V
BE(on)
h
FE
T
obo
on
off
250
300
300
200
35
820 900 mV IC=4A, VCE=2V*
430
450
450
1200
350
70
180 MHz IC=50mA, VCE=10V
45 60 pF VCB=10V, f=1MHz
125 ns IC=4A, IB=40mA, VCC=10V
380 ns
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%
I
=10mA, VCE=2V*
C
I
=0.5A, VCE=2V*
C
=1A, VCE=2V*
I
C
=4A, VCE=2V*
I
C
I
=20A, VCE=2V*
C
f=50MHz
=4A, I
=±40mA, V
I
C
B
CC
=10V
Loading...