Zetex ZTX1048A Datasheet
NPN SILICON PLANAR MEDIUM POWER
HIGH GAIN TRANSISTOR
ISSUE 3 FEBRUARY 1995
FEATURES
*V
* Very Low Saturation Voltages
*High Gain
* 20 Amps pulse current
APPLICATIONS
* LCD Backlight Convertors
* Emergency Lighting
* DC-DC Convertors
ABSOLUTE MAXIMUM RATINGS.
=50V
CEV
PARAMETER SYMBOL ZTX1048A UNIT
Collector-Base Voltage V
Collector-Emitter Voltage V
Emitter-Base Voltage V
Peak Pulse Current I
Continuous Collector Current I
Base Current I
Power Dissipation at T
=25°C P
amb
Operating and Storage Temperature
Range
CM
C
B
T
CBO
CEO
EBO
tot
j:Tstg
-55 to +200 °C
ZTX1048A
C
B
E
E-Line
TO92 Compatible
50 V
17.5 V
5V
20 A
4A
500 mA
1W
ZTX1048A
ELECTRICAL CHARACTERISTICS (at T
PARAMETER SYMBOL
Collector-Base Breakdown
Voltage
Collector-Emitter
Breakdown Voltage
Collector-Emitter
Breakdown Voltage
Collector-Emitter
Breakdown Voltage
Emitter-Base Breakdown
Voltage
Collector Cut-Off Current I
Emitter Cut-Off Current I
Collector Emitter Cut-Off
Current
Collector-Emitter Saturation
Voltage
Base-Emitter
Saturation Voltage
Base-Emitter Turn-On
Voltage
Static Forward Current
Transfer Ratio
Transition Frequency f
Output Capacitance C
Switching Times
V
(BR)CBO
V
CES
V
CEO
V
CEV
V
(BR)EBO
CBO
EBO
I
CES
V
CE(sat)
V
BE(sat)
V
BE(on)
h
FE
T
obo
t
on
t
off
MIN. TYP. MAX.
50 85 V
50 85 V
17.5 24 V IC=10mA
50 85 V
58.7 V
280
300
300
220
50
= 25°C unless otherwise stated).
amb
ZTX1048A
UNIT CONDITIONS.
I
=100µA
C
IC=100µA
IC=100µA, V
I
=100µA
E
=1V
EB
0.3 10 nA VCB=35V
0.3 10 nA VEB=4V
0.3 10 nA VCES=35V
27
55
110
210
45
75
150
245
mV
mV
mV
mV
IC=0.5A, IB=10mA*
I
=1A, IB=10mA*
C
I
=2A, IB=10mA*
C
I
=4A, IB=20mA*
C
860 950 mV IC=4A, IB=20mA*
860 950 mV IC=4A, VCE=2V*
440
450
450
330
80
1200
IC=10mA, VCE=2V*
I
=0.5A, VCE=2V*
C
I
=1A, VCE=2V*
C
I
=4A, VCE=2V*
C
=20A, VCE=2V*
I
C
150 MHz IC=50mA, VCE=10V
f=50MHz
60 80 pF VCB=10V, f=1MHz
130 ns IC=4A, IB=40mA, VCC=10V
180 ns
I
C
=4A, I
=±40mA, V
B
CC
=10V
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