Zetex ZTX1047A Datasheet
NPN SILICON PLANAR MEDIUM POWER
HIGH GAIN TRANSISTOR
ISSUE 3 JANUARY 1995
FEATURES
* Very Low Saturation Voltage
*High Gain
* 4 Amp Continuous Current
APPLICATIONS
* DC-DC Convertors
* Power Management - Supply Switching
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL ZTX1047A UNIT
Collector-Base Voltage V
Collector-Emitter Voltage V
Emitter-Base Voltage V
Peak Pulse Current I
Continuous Collector Current I
Base Current I
Power Dissipation at T
=25°C P
amb
Operating and Storage Temperature
Range
CM
C
B
T
CBO
CEO
EBO
tot
j:Tstg
-55 to +200 °C
ZTX1047A
C
B
E
E-Line
TO92 Compatible
35 V
10 V
5V
20 A
4A
500 mA
1W
ZTX1047A
ELECTRICAL CHARACTERISTICS (at T
= 25°C unless otherwise stated).
amb
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base Breakdown
Voltage
Collector-Emitter
Breakdown Voltage
Collector-Emitter
Breakdown Voltage
Collector-Emitter
Breakdown Voltage
Emitter-Base Breakdown
Voltage
Collector Cut-Off Current I
Emitter Cut-Off Current I
Collector Emitter Cut-Off
Current
Collector-Emitter Saturation
Voltage
Base-Emitter
Saturation Voltage
Base-Emitter Turn-On
Voltage
Static Forward Current
Transfer Ratio
Transition Frequency f
Output Capacitance C
Switching Times
V
(BR)CBO
V
CES
V
CEO
V
CEV
V
(BR)EBO
CBO
EBO
I
CES
V
CE(sat)
V
BE(sat)
V
BE(on)
h
FE
T
obo
t
on
t
off
35 55 V
35 55 V
I
=100µA
C
IC=100µA
10 14 V IC=10mA
35 55 V
5 8.7 V
IC=100µA, V
I
=100µA
E
0.3 10 nA VCB=20V
0.3 10 nA VEB=4V
0.3 10 nA VCES=20V
23
44
120
130
40
70
185
190
mV
mV
mV
mV
IC=0.5A, IB=10mA*
I
=1A, IB=10mA*
C
I
=3A, IB=10mA*
C
=4A, IB=20mA*
I
C
860 950 mV IC=4A, IB=20mA*
810 900 mV IC=4A, VCE=2V*
280
300
240
150
60
440
450
380
230
110
1200
IC=10mA, VCE=2V*
I
=1A, VCE=2V*
C
I
=4A, VCE=2V*
C
=10A, VCE=2V*
I
C
I
=20A, VCE=2V*
C
150 MHz IC=50mA, VCE=10V
f=50MHz
85 110 pF VCB=10V, f=1MHz
130 ns IC=4A, IB=40mA, VCC=10V
180 ns
=4A, I
I
C
=±40mA, V
B
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%
=1V
EB
=10V
CC
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