ZLLS2000
40V SILICON HIGH CURRENT LOW LEAKAGE SCHOTTKY DIODE
SUMMARY
Schottky Diode V
DESCRIPTION
This compact SOT23-6 packaged Schottky diode offers users an excellent
performance combination comprising high current operation, extremely low leakage
and low forward voltage ensuring suitability for applications requiring efficient
operation at higher temperatures ( above 85⬚C) see Operational Efficiency chart on
page 4.
Key benefits:
Performance capability equivalent to much larger packages
Improved circuit efficiency & power levels
PCB area savings
FEATURES
· Low Equivalent On Resistance
· Extremely Low Leakage (40A @30V)
· High current capability (I
· Low V
·
·
, Fast switching Schottky
F
SOT23-6 Package
ZLLS2000 complements low temperature equivalent ZHCS2000
= 40V; IF= 2.2A; IR= 40 A
R
= 2.2A)
F
·
Package thermally rated to 150⬚C
APPLICATIONS
·
DC - DC Converters
·
Strobes
·
Mobile Phones
·
Charging Circuits
·
Motor control
ORDERING INFORMATION
DEVICE REEL
(inches)
ZLLS1000TA 7 8mm embossed 3000 units
ZLLS1000TC 13 8mm embossed 10000 units
TAPE WIDTH
(mm)
QUANTITY
PER REEL
DEVICE MARKING
L10
ISSUE 1 - JANUARY 2002
Top view
1
ZLLS2000
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Schottky Diode
Continuous Reverse Voltage V
Forward Current I
Peak Repetitive Forward Current
R
F
I
FPK
Rectangular Pulse Duty Cycle
Non Repetitive Forward Current t=ⱕ100s
I
FSM
t=ⱕ10ms
Package
Power Dissipation at T
single die continuous
amb
=25⬚C
P
D
single die measured at t<5 secs
Storage Temperature Range T
Junction Temperature
stg
Tj
THERMAL RESISTANCE
PARAMETER SYMBOL VALUE UNIT
Junction to Ambient (a) R
Junction to Ambient (b) R
⍜JA
⍜JA
40 V
2.2 A
3.55 A
36
12
1.1
1.71
A
A
W
W
-55 to +150 ⬚C
150 ⬚C
113 °C/W
73 °C/W
Notes
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper,
in still air conditions.
(b) For a device surface mounted on FR4 PCB measured at t<5secs.
ISSUE 1 - JANUARY 2002
2