Zetex ZLLS1000TA, ZLLS1000TC Datasheet

ZLLS1000
40V SILICON HIGH CURRENT LOW LEAKAGE SCHOTTKY DIODE
SUMMARY Schottky Diode V
DESCRIPTION
Key benefits:
Performance capability equivalent to much larger packages
Improved circuit efficiency & power levels
PCB area savings
FEATURES
· Low Equivalent On Resistance
· Extremely Low Leakage (20A @30V)
· High current capability (I
· Low V
· SOT23 Package
·
, Fast switching Schottky
F
ZLLS1000 complements low temperature equivalent ZHCS1000
= 40V; IF= 1.16A; IR= 20 A
R
= 1.16A)
F
·
Package thermally rated to 150C
APPLICATIONS
·
DC - DC Converters
·
Strobes
·
Mobile Phones
·
Charging Circuits
·
Motor control
ORDERING INFORMATION
DEVICE REEL
(inches) ZLLS1000TA 7 8mm embossed 3000 units ZLLS1000TC 13 8mm embossed 10000 units
TAPE WIDTH (mm)
QUANTITY PER REEL
DEVICE MARKING
L10
ISSUE 1 - JANUARY 2002
Top view
1
ZLLS1000
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT Schottky Diode
Continuous Reverse Voltage V Forward Current I Peak Repetitive Forward Current
R
F
I
FPK
Rectangular Pulse Duty Cycle Non Repetitive Forward Current t=100␮s
I
FSM
t=10ms
Package
Power Dissipation at T single die continuous
amb
=25⬚C
P
D
single die measured at t<5 secs Storage Temperature Range T Junction Temperature
stg
Tj
THERMAL RESISTANCE
PARAMETER SYMBOL VALUE UNIT
Junction to Ambient (a) R Junction to Ambient (b) R
JA
JA
40 V
1.16 A
1.88 A
22
6.4
625 840
A A
mW mW
-55 to +150 ⬚C 150 ⬚C
200 °C/W 149 °C/W
Notes (a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper,
in still air conditions. (b) For a device surface mounted on FR4 PCB measured at t<5secs.
ISSUE 1 - JANUARY 2002
2
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