Zetex ZHCS756 Datasheet
SOT23 SILICON HIGH CURRENT
SCHOTTKY BARRIER DIODE “SuperBAT”
ZHCS756
ISSUE 1- NOVEMBER 1997 ✪
FEATURES:
• Low V
F
• High Current Capability
1
C
1
APPLICATIONS:
• DC - DC converters
• Mobile telecomms
• PCMCIA
PARTMARK DETAIL: S76
3
SOT2 3
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Continuous Reverse Voltage V
Forward Current (Continuous) I
Forward Voltage @ I
=750mA V
F
Average Peak Forward Current; D.C. = 50% I
Non Repetitive Forward Current t≤100µs
I
R
F
F
FAV
FSM
t≤10ms
Power Dissipation at T
Storage Temperature Range T
Junction Temperature T
ELECTRICAL CHARACTERISTICS (at T
=25°C P
amb
tot
stg
j
= 25° C unless otherwise stated).
amb
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Reverse Breakdown
Voltage
Forward Voltage V
Reverse Current I
Diode Capacitance C
Reverse Recovery
Time
V
t
R
rr
(BR)R
F
D
60 80 V
290
250
330
285
410
350
500
440
610
520
700
600
900
760
50 100
17 pF f= 1MHz,VR= 25V
12 ns switched from
mV
mV
mV
mV
mV
mV
mV
µA
*Measured under pulsed conditions. Pulse w idth= 300µs; duty cycle ≤2%.
60 V
750 mA
610 mV
1500 mA
12
5
500 mW
-55 to + 150 ° C
125 ° C
= 300µA
I
R
I
= 50mA*
F
I
= 100mA*
F
I
= 250mA*
F
I
= 500mA*
F
I
= 750mA*
F
I
= 1000mA*
F
I
= 1500mA*
F
VR=45V
I
= 500mA to IR = 500mA
F
Measured at I
= 50mA
R
2
A
3
A
A
ZHCS756
TYPICAL CHARACTERISTICS
100m
10m
IF - Forward Current (A)IF(av) - Avg Fwd Cur (A)
1
1m
1m
0
0.1 0.2 0.3 0.4 0.5 0.6
VF- Forward Voltage (V)
IF v VF
0.8
0.6
0.4
0.2
125
100
1
D=0.5
D=0.2
D=0.1
D=0.05
0
60
Typical
DC
70 80 90 100 110 120
TC - Case Temperature ( C)
I
F(av)
v T
100m
+125°C
10m
+100°C
1m
+50°C
+25°C
10u
1u
-55°C
060
20 40
+125°C
+25°C
-55°C
100u
IR - Reverse Current (A)
100n
VR- Reverse Voltage (V)
IR v VR
0.5
0.4
0.3
0.2
0.1
160
Typical
Tj=125 C
t
1
D=t
/t
p
1
I
DC
D=0.5
D=0.2
D=0.1
0
0.2 0.4 0.6 0.8 1
0
D=0.05
F(pk)
t
p
I
=DxI
F(av)
F(pk)
P
xV
F(av)=IF(av)
F
IF(av) - Avg Fwd Curr (A)
P
v I
F(av)
F(av)
80
t
1
D=t
/t
p
1
I
F(pk)
t
p
I
=DxI
F(av)
F(pk)
=I xV
F(av)PF(av)
F
- Avg Pwr Diss (W)
F(av)
P
C
Rth=100°C/W
Rth=200°C/W
Rth=300°C/W
Ta - Ambient Temp (°C)
75
1 10 100 0 60
VR- Reverse Voltage (V)
Ta v VR
- Diode Capacitance (pF)
D
C
0
20 40
VR- Reverse Voltage (V)
CD v VR
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