Zetex ZHCS750 Datasheet
SOT23 SILICON HIGH CURRENT
SCHOTTKY BARRIER DIODE “SuperBAT”
ZHCS750
ISSUE 2 - October 1997 ✪
FEATURES:
* Low V
* High Current Capability
F
APPLICATIONS:
1
C
1
* DC - DC converters
* Mobile telecomms
*PCMCIA
PARTMARK DETAIL: ZS7
3
SOT2 3
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Continuous Reverse Voltage V
Forward Current (Continuous) I
Forward Voltage @ I
=750mA V
F
Average Peak Forward Current; D.C. = 50% I
Non Repetitive Forward Current t≤100µs
I
R
F
F
FAV
FSM
t≤10ms
Power Dissipation at T
Storage Temperature Range T
Junction Temperature T
ELECTRICAL CHARACTERISTICS (at T
=25°C P
amb
tot
stg
j
= 25° C unless otherwise stated).
amb
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Reverse Breakdown
Voltage
Forward Voltage V
Reverse Current I
Diode Capacitance C
Reverse Recovery
Time
V
t
R
rr
(BR)R
F
D
40 60 V
225
280
235
310
290
350
340
420
390
490
440
540
530
650
50 100
25 pF f= 1MHz,VR= 25V
12 ns switched from
mV
mV
mV
mV
mV
mV
mV
µA
*Measured under pulsed conditions. Pulse w idth= 300µs; duty cycle ≤2%.
40 V
750 mA
490 mV
1500 mA
12
5.2
500 mW
-55 to + 150 ° C
125 ° C
= 300µA
I
R
IF= 50mA*
I
= 100mA*
F
I
= 250mA*
F
I
= 500mA*
F
I
= 750mA*
F
I
= 1000mA*
F
I
= 1500mA*
F
VR=30V
I
= 500mA to IR = 500mA
F
Measured at I
= 50mA
R
2
A
3
A
A
ZHCS750
TYPICAL CHARACTERISTICS
10
1
0.1
IF - Forward Current (A)
0.01
00.40.80.2 0.6
+125°C
+25°C
-55°C
VF - Forward Voltage (V)
IFv V
F
1.2
Typical
DC
0.8
F(av)
I
D=0.5
D=0.2
0.4
D=0.1
D=0.05
Average Forward Current (A)
0
75 125
85 95 105 115
TC - Case Temperature (°C)
I
v T
F(av)
125
100m
10m
100µ
10µ
1m
+125°C
+100°C
+50°C
+25°C
Typical
1µ
100n
IR - Reverse Current (A)
D=t
/t
t
1
1
p
I
F(pk)
t
p
I
=D x I
F(av)
F(pk)
)
F(av
P
C
Typical
-55°C
10n
030
0.5
Typical
Tj=125°C
0.4
0.3
0.2
0.1
0
IF(av) Average Forward Current (A)
Average Power Dissipation (mW)
10 20
VR - Reverse Voltage (V)
IRv V
R
t
1
DC
D=0.5
D=0.2
D=0.1
D=0.05
I
F(av)
0.4 0.8
P
v I
F(av)
F(av)
t
P
D=t
p
=D x I
F(av)
/t
1
p
I
F(pk)
F(pk)
x V
=I
F(av)
F
1.20
200
Rth=100° C/W
Rth=200°C/W
th=300° C/W
100
Ta - Ambient Temp (° C)
75
110100
VR - Reverse Voltage (V)
R
Tav VR
100
CD - Diode Capacitance (pF)
0
030
10 20
VR - Reverse Voltage (V)
CDv V
R
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