Zetex ZHCS506 Datasheet

SOT23 SILICON HIGH CURRENT
SCHOTTKY BARRIER DIODE “SuperBAT”

ZHCS506

ISSUE 1 - September 1997 ✪

FEATURES:

• Low V

F

• High Current Capability
APPLICATIONS:

1

C
1

• DC - DC converters

• Mobile telecomms

• PCMCIA

PARTMARK DETAIL: S56

3

SOT2 3

ABSOLUTE MAXIMUM RATINGS.

PARAMETER SYMBOL VALUE UNIT
Continuous Reverse Voltage V
Forward Current (Continuous) I
Forward Voltage @ I

=500mA V

F

Average Peak Forward Current; D.C. = 50% I
Non Repetitive Forward Current t≤100µs

I

R

F

F

FAV

FSM

t≤10ms

Power Dissipation at T
Storage Temperature Range T
Junction Temperature T

ELECTRICAL CHARACTERISTICS (at T

=25°C P

amb

tot

stg

j

= 25° C unless otherwise stated).

amb

PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Reverse Breakdown

Voltage
Forward Voltage V

Reverse Current I

Diode Capacitance C
Reverse Recovery

Time

V

t

R

rr

(BR)R

F

D

60 80 V

275

310

320

360

415

470

550

630

680

800

820

960

1120

1350

565
20 40

20 pF f= 1MHz,VR= 25V
10 ns switched from

mV
mV
mV
mV
mV
mV
mV
mV

µA

*Measured under pulsed conditions. Pulse w idth= 300µs; duty cycle ≤2%.

60 V
500 mA
630 mV

1000 mA

5.5

2.5

330 mW

-55 to + 150 ° C
125 ° C

= 200µA

I

R

IF= 50mA*
I

= 100mA*

F

I

= 250mA*

F

I

= 500mA*

F

I

= 750mA*

F

I

= 1000mA*

F

I

= 1500mA*

F

I

= 500mA, T

F

=100°C*

amb

VR=45V

I

= 500mA to IR = 500mA

F

Measured at I

= 50mA

R

2

A
3

A
A

ZHCS506

1

100m

10m

IF - Forward Current (A)IF(av) - Avg Fwd Cur (A)

1m

0

0.1 0.2 0.3 0.4 0.5 0.6

VF- Forward Voltage (V)

IF v VF

0.6

D=0.5

0.4

D=0.2

D=0.1

0.2

D=0.05

0

75 85 95 105 115 125

DC

TC - Case Temperature (°C)

IF(av) v TC

+125°C

+25°C

-55°C

t

1

D=t

t

p

I

F(av)

F(av)PF(av)

/t

1

=DxI

=I xV

10m

+125°C

1m

+100°C

100u

+50°C

10u

+25°C

1u

100n

IR - Reverse Current (A)

-55°C

10n

0

10 20 30 40 50 60

VR- Reverse Voltage (V)

IR v VR

PF(av) - Avg Pwr Diss (W)

0.4

Tj=125°C

0.3

0.2

0.1

0

0.1 0.2 0.3 0.4 0.5 0.6

0

IF(av) - Avg Fwd Curr (A)

DC

D=0.5
D=0.2

D=0.1

D=0.05

t

1

D=t

/t

p

1

I

F(pk)

t

p

I

=DxI

F(av)

F(pk)

P

xV

F(av)=IF(av)

F

p

I

F(pk)

F(pk)

F

PF(av) v IF(av)

125

Rth=100°C/W

Rth=200°C/W

95

- Ambient Temp (°C)

a

T

65

1 10 100 0 60

Rth=300°C/W

VR - Reverse Voltage (V)

Ta v VR

90

50

CD - Diode Capacitance (pF)

0

20 40

10 30 50

VR - Reverse Voltage (V)

CD v VR