Zetex ZHCS500 Datasheet
SOT23 SILICON HIGH CURRENT
SCHOTTKY BARRIER DIODE “SuperBAT”
ZHCS500
ISSUE 1- September 199 7 ✪
FEATURES:
• Low V
F
• High Current Capability
1
C
1
APPLICATIONS:
• DC - DC converters
• Mobile telecomms
• PCMCIA
PARTMARK DETAIL: ZS5
3
SOT2 3
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Continuous Reverse Voltage V
Forward Current (Continuous) I
Forward Voltage @ I
=500mA V
F
Average Peak Forward Current; D.C. = 50% I
Non Repetitive Forward Current t≤100µs
I
R
F
F
FAV
FSM
t≤10ms
Power Dissipation at T
Storage Temperature Range T
Junction Temperature T
ELECTRICAL CHARACTERISTICS (at T
=25°C P
amb
tot
stg
j
= 25° C unless otherwise stated).
amb
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Reverse Breakdown
Voltage
Forward Voltage V
Reverse Current I
Diode Capacitance C
Reverse Recovery
Time
V
t
R
rr
(BR)R
F
D
40 60 V
270
300
300
350
370
460
465
550
550
670
640
780
810
1050
440
15 40
20 pF f= 1MHz,VR= 25V
10 ns switched from
mV
mV
mV
mV
mV
mV
mV
mV
µA
*Measured under pulsed conditions. Pulse w idth= 300µs; duty cycle ≤2%.
40 V
500 mA
550 mV
1000 mA
6.75
3
330 mW
-55 to + 150 ° C
125 ° C
= 200µA
I
R
IF= 50mA*
I
= 100mA*
F
I
= 250mA*
F
I
= 500mA*
F
I
= 750mA*
F
I
= 1000mA*
F
I
= 1500mA*
F
I
= 500mA, T
F
=100°C*
amb
VR=30V
I
= 500mA to IR = 500mA
F
Measured at I
= 50mA
R
2
A
3
A
A
ZHCS500
TYPICAL CHARACTERISTICS
1
100m
10m
IF - Forward Current (A)IF(av) - Avg Fwd Cur (A)
1m
0
0.1 0.2 0. 3 0.4 0.5
VF- Forward Voltage (V)
IF v VF
0.6
DC
D=0.5
0.4
D=0.2
0.2
D=0.1
D=0.05
0
100 105 110 115 120 12 5
TC - Case Temperature (°C)
IF(av) v TC
125
t
1
I
+125°C
+25°C
-55°C
D=t
t
p
F(av)
F(av)PF(av)
/t
1
=DxI
=I xV
100m
10m
+125°C
1m
+100°C
100u
+50°C
10u
+25°C
1u
100n
- Reverse Current (A)
10n
R
-55°C
I
1n
0
10 20 30 40
VR- Reverse Voltage (V)
IR v VR
- Avg Pwr Diss (W)
F(av)
P
0.4
Tj=125°C
0.3
0.2
0.1
0
0.1 0.2 0.3 0.4 0.5 0.6
0
IF(av) - Avg Fwd Curr (A)
DC
DC=0.5
DC=0.2
DC=0.1
DC=0.05
t
1
D=t
/t
p
1
I
F(pk)
t
p
I
=DxI
F(av)
F(pk)
P
xV
F(av)=IF(av)
F
p
I
F(pk)
F(pk)
F
PF(av) v IF(av)
90
Rth=100° C/W
Rth=200°C/W
95
- Ambient Temp (°C)
a
T
65
1101000
Rth=300°C/W
- Diode Capacitance (pF)
D
C
50
0
VR - Reverse Voltage (V)
Ta v VR
10 20 30 40
VR - Reverse Voltage (V)
CD v VR
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