Zetex ZHCS400 Datasheet
SOD323 SILICON HIGH CURRENT
SOD323
SCHOTTKY BARRIER DIODE “SuperBAT”
ISSUE 1- NOVEMBER 1998 ✪
FEATURES:
• Low V
• High Current Capability
• Miniature Surface Mount Package
APPLICATIONS:
• DC - DC converters
• Mobile telecomms
• PCMCIA
Partmark Detail - BD
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Continuous Reverse Voltage V
Forward Current (Continuous) I
Forward Voltage @ I
Average Peak Forward Current; D.C. = 50% I
Non Repetitive Forward Current t≤100µs
Power Dissipation at T
Storage Temperature Range T
Junction Temperature T
F
R
F
=400mA V
F
t≤10ms
=25°C P
amb
I
F
FAV
FSM
tot
stg
j
ZHCS400
C
40 V
400 mA
500 mV
1000 mA
6.75
3
250 mW
-55 to +150 °C
125 °C
A
A
A
ELECTRICAL CHARACTERISTICS (at T
= 25°C unless otherwise stated).
amb
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Reverse Breakdown
Voltage
Forward Voltage V
Reverse Current I
Diode Capacitance C
Reverse Recovery
Time
V
t
(BR)R
F
R
D
rr
40 60 V
300
270
350
300
460
370
500
425
670
550
780
640
1050
810
440
15 40
20 pF f=1MHz,VR=25V
10 ns switched from
mV
mV
mV
mV
mV
mV
mV
mV
µA
I
=200µA
R
I
=50mA*
F
I
=100mA*
F
I
=250mA*
F
I
=400mA*
F
I
=750mA*
F
I
=1000mA*
F
I
=1500mA*
F
I
=500mA, T
F
VR=30V
I
= 500mA to IR = 500mA
F
Measured at I
=100°C*
amb
= 50mA
R
ZHCS400
TYPICAL CHARACTERISTICS
1
100m
10m
1m
0
0.1 0.2 0.3 0.4 0.5
+125°C
+25°C
VF- Forward Voltage (V)
IF v VF
0.6
DC
D=0.5
0.4
D=0.2
0.2
D=0.1
D=0.05
0
100 105 110 115 120 125
TC- Case Temperature (°C)
t
1
I
D=t
t
p
F(av)
F(av)PF(av)
IF(av) v TC
125
-55°C
=DxI
=I xV
100m
10m
+125°C
1m
+100°C
100u
+50°C
10u
+25°C
1u
100n
10n
-55°C
1n
0
10 20 30 40
VR- Reverse Voltage (V)
IR v VR
/t
p
1
I
F(pk)
F(pk)
F
0.4
Tj=125°C
0.3
0.2
0.1
0
0
0.1 0.2 0.3 0.4 0.5 0.6
I
- Avg Fwd Curr (A)
F(av)
DC
DC=0.5
DC=0.2
DC=0.1
DC=0.05
t
1
D=t
/t
p
1
I
F(pk)
t
p
I
=DxI
F(av)
F(pk)
P
xV
F(av)=IF(av)
F
PF(av) v IF(av)
90
Rth=100° C/W
Rth=200°C/W
95
65
1101000
Rth=300°C/W
VR- Reverse Voltage (V)
Ta v VR
50
0
10 20 30 40
VR - Reverse Voltage (V)
CD v VR
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