Zetex ZHCS2000TA, ZHCS2000TC Datasheet

40V SILICON HIGH CURRENT SCHOTTKY BARRIER DIODE
SUMMARY V
=40V; IC= 2A
R
DESCRIPTION
A surface mount Schottky Barrier Diode featuring low forward voltage drop suitable for high frequency rectification and reverse voltage protection.
ZHCS2000
FEATURES
High current capability
Low forward voltage (V
Fast recovery time
Small package size
APPLICATIONS
Mobile telecomms, PCMIA & SCSI
DC-DC Conversion
High frequency rectification
ORDERING INFORMATION
DEVICE REEL SIZE
ZHCS2000TA
ZHCS2000TC
DEVICE MARKING
ZS2
max=0.5V)
F
(inches)
7
13
TAPE WIDTH (mm)
8mm embossed 3000 units
8mm embossed 10000 units
QUANTITY PER REEL
SOT23-6
Top View
ISSUE 1 - DECEMBER 2000
1
ZHCS2000
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL
Continuous Reverse Voltage V
Forward Current I
Average Peak Forward Current;D.C.=50% I Non Repetitive Forward Current t100µs
t10ms
Power Dissipation at T
=25°C P
amb
Storage Temperature Range T
Junction Temperature T
F
FAV
I
FSM
R
tot
stg
j
VALUE UNIT
40 V
2A
4A
20 10
1.1 W
-55 to +150 °C
125 °C
A A
THERMAL RESISTANCE
PARAMETER SYMBOL
Junction to Ambient (a) R
Junction to Ambient (b) R
θJA
θJA
NOTES (a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper,
in still air conditions (b) For a device surface mounted on FR4 PCB measured at t5 secs.
VALUE UNIT
113 °C/W
73 °C/W
ISSUE 1 - DECEMBER 2000
2
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