40V SILICON HIGH CURRENT SCHOTTKY BARRIER DIODE
SUMMARY
V
=40V; IC= 2A
R
DESCRIPTION
A surface mount Schottky Barrier Diode featuring low forward voltage drop
suitable for high frequency rectification and reverse voltage protection.
ZHCS2000
FEATURES
High current capability
•
Low forward voltage (V
•
Fast recovery time
•
Small package size
•
APPLICATIONS
• Mobile telecomms, PCMIA & SCSI
• DC-DC Conversion
• High frequency rectification
ORDERING INFORMATION
DEVICE REEL SIZE
ZHCS2000TA
ZHCS2000TC
DEVICE MARKING
ZS2
max=0.5V)
F
(inches)
7
13
TAPE WIDTH
(mm)
8mm embossed 3000 units
8mm embossed 10000 units
QUANTITY
PER REEL
SOT23-6
Top View
ISSUE 1 - DECEMBER 2000
1
ZHCS2000
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL
Continuous Reverse Voltage V
Forward Current I
Average Peak Forward Current;D.C.=50% I
Non Repetitive Forward Current t≤100µs
t≤10ms
Power Dissipation at T
=25°C P
amb
Storage Temperature Range T
Junction Temperature T
F
FAV
I
FSM
R
tot
stg
j
VALUE UNIT
40 V
2A
4A
20
10
1.1 W
-55 to +150 °C
125 °C
A
A
THERMAL RESISTANCE
PARAMETER SYMBOL
Junction to Ambient (a) R
Junction to Ambient (b) R
θJA
θJA
NOTES
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper,
in still air conditions
(b) For a device surface mounted on FR4 PCB measured at t⭐5 secs.
VALUE UNIT
113 °C/W
73 °C/W
ISSUE 1 - DECEMBER 2000
2