Zetex ZHCS1006 Datasheet
SOT23 SILICON HIGH CURRENT
SCHOTTKY BARRIER DIODE ”SuperBAT”
ZHCS1006
ISSUE 1 - NOVEMBER 1997 ✪
FEATURES:
• High current capability
• Low V
F
APPLICATIONS:
1
C
1
• Mobile telecomms, PCMIA & SCSI
• DC-DC Conversion
PARTMARKING DETAILS : S16
ABSOLUTE MAXIMUM RATINGS.
3
SOT2 3
PARAMETER SYMBOL VALUE UNIT
Continuous Reverse Voltage V
Forward Current I
Forward Voltage @ I
= 1000mA(typ) V
F
Average Peak Forward Current;D.C.= 50% I
Non Repetitive Forward Current t≤100µs
t≤10ms
Power Dissipation at T
=25°C P
amb
Storage Temperature Range T
Junction Temperature T
ELECTRICAL CHARACTERISTICS (at T
R
F
F
FAV
I
FSM
tot
stg
j
= 25° C unless otherwise stated).
amb
60 V
900 mA
600 mV
1600 mA
12
5
500 mW
-55 to + 150 ° C
125 ° C
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Reverse Breakdown
Voltage
Forward Voltage V
Reverse Current I
Diode Capacitance C
Reverse Recovery
Time
V
t
R
rr
(BR)R
F
D
60 80 V
280
245
320
275
390
330
470
395
530
455
600
510
740
620
50 100
mV
mV
mV
mV
mV
mV
mV
µA
I
I
I
I
I
I
I
I
VR= 45V
17 pF f= 1MHz,VR=25V
12 ns switched from
I
500mA
=300µA
R
= 50mA*
F
= 100mA*
F
= 250mA*
F
= 500mA*
F
= 750mA*
F
= 1000mA*
F
= 1500mA*
F
= 500mA to IR =
F
Measured at I
*Measured under pulsed conditions. Pulse width= 30 0 µs. Duty cycle ≤2%
2
A
3
A
A
= 50mA
R
ZHCS1006
TYPICAL CHARACTERISTICS
TYPICAL CHARACTERISTICS
10
1
100m
10m
- Forward Current (A)IF(av) - Avg Fwd Cur (A)
F
I
1m
0
0.1 0.2 0.3 0.4 0.5 0.6
VF - Forward Voltage (V)
F
IFv V
0.8
Typical
Tj=125°C
0.6
0.4
0.2
0
75 125
DC
D=0.5
D=0.2
D=0.1
D=0.05
85 95 105 115
TC - Case Temperature (°C)
F(av)
v T
C
I
+125°C
+25°C
-55°C
t
1
I
D=t
t
p
F(av)
F(av)PF(av)
/t
1
=DxI
=I xV
1
100m
10m
100u
10u
1m
+125°C
+100°C
+50°C
+25°C
1u
100n
10n
IR - Reverse Current (A)
-55°C
1n
060
20 40
VR - Reverse Voltage (V)
R
IRv V
p
0.6
I
F(pk)
F(pk)
F
0.4
0.2
PF(av) - Avg Pwr Diss (W)
0
0
I
DC
D=0.5
D=0.2
D=0.1
D=0.05
0.4 0.8 1.2
- Avg Fwd Curr (A)
F(av)
F(av)
v I
F(av)
P
Typ ic al
Tj=125°C
t
1
D=t
/t
p
1
I
F(pk)
t
p
I
=DxI
F(av)
F(pk)
P
xV
F(av)=IF(av)
F
125
100
Rth=100°C/W
Rth=200°C/W
Rth=300°C/W
Ta - Ambient Temp (°C)
75
1101000 60
VR - Reverse Voltage (V)
R
Tav V
CD - Diode Capacitance (pF)
140
70
0
20 40
VR- Reverse Voltage (V)
R
CDv V
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