Zetex ZHCS1000 Datasheet

SOT23 SILICON HIGH CURRENT
SCHOTTKY BARRIER DIODE ”SuperBAT”

ZHCS1000

ISSUE 2 - OCTOBER 1997 ✪

FEATURES:

• High current capability

• Low V

F

APPLICATIONS:

1

C
1

• Mobile telecomms, PCMIA & SCSI

• DC-DC Conversion

PARTMARKING DETAILS : ZS1

ABSOLUTE MAXIMUM RATINGS.

3

SOT2 3

PARAMETER SYMBOL VALUE UNIT
Continuous Reverse Voltage V
Forward Current I
Forward Voltage @ I

= 1000mA(typ) V

F

Average Peak Forward Current;D.C.= 50% I
Non Repetitive Forward Current t≤100µs

t≤10ms

Power Dissipation at T

=25°C P

amb

Storage Temperature Range T
Junction Temperature T

ELECTRICAL CHARACTERISTICS (at T

R

F

F

FAV

I

FSM

tot

stg

j

= 25° C unless otherwise stated).

amb

40 V

1000 mA

425 mV

1750 mA

12

5.2

500 mW

-55 to + 150 ° C
125 ° C

PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Reverse Breakdown

Voltage
Forward Voltage V

Reverse Current I

Diode Capacitance C
Reverse Recovery

Time

V

t

R

rr

(BR)R

F

D

40 60 V

270

240

290

265

340

305

400

355

450

390

500

425

600

495

—

420

mV
mV
mV
mV
mV
mV
mV
mV

I

I
I
I
I
I
I
I
I
*

50 100

µA

VR= 30V

25 pF f= 1MHz,VR=25V
12 ns switched from

I
500mA

=300µA

R

= 50mA*

F

= 100mA*

F

= 250mA*

F

= 500mA*

F

= 750mA*

F

= 1000mA*

F

= 1500mA*

F

= 1000mA,Ta= 100°C

F

= 500mA to IR =

F

Measured at I

*Measured under pulsed conditions. Pulse width= 30 0 µs. Duty cycle ≤2%

2

A
3

A
A

= 50mA

R

ZHCS1000

TYPICAL CHARACTERISTICS

10

1

100m

10m

IF - Forward Current (A)

1m

0

0.1 0.2 0.3 0.4 0.5 0.6

VF - Forward Voltage (V)

IF v VF

0.8

Typical

DC

0.6

D=0.5

D=0.2

0.4

D=0.1

0.2

D=0.05

IF(av) - Avg Fwd Cur (A)

0

85 95 105 115

75 125

TC - Case Temperature (°C)

IF(av) v TC

125

+125°C
+25°C

-55°C

I

100m

10m

+125°C

1m

+100°C

100u

10u

+50° C

+25°C

1u

100n

IR - Reverse Current (A)

-55° C

10n

030

10 20

VR - Reverse Voltage (V)

IR v VR

0.6

PF(av) - Avg Pwr Diss (W)

Typical

Tj=125°C

0.4

D=t

/t

t

1

1

p

I

0.2

0

0

DC

D=0.5
D=0.2

D=0.1

D=0.05

0.4 0.8 1.2

F(pk)

t

p
=D x

I

I

F(av)

F(pk)

x

P

V

=I

F(av)

F(av)

F

D=t

/t

t

1

1

p

I

F(pk)

t

p

=D x I

F(av)

F(pk)

IF(av) - Avg Fwd Curr (A)

PF(av) v IF(av)

Typical

200

Rth=100° C/W

Rth=200° C/W

100

Rth=300° C/W

Ta - Ambient Temp (°C)

75

1101000 30

VR - Reverse Voltage (V)

Tav V

R

CD - Diode Capacitance (pF)

100

0

10 20

VR - Reverse Voltage (V)

CD v VR