Zetex ZDT758 Datasheet
SM-8 DUAL PNP MEDIUM POWER
TRANSISTORS
ISSUE 1 - NOVEMBER 1995
ZDT758
C
1
C
1
C
2
C
2
PARTMARKING DETAIL T758
B
1
E
1
B
2
E
2
SM-8
(8 LEAD SOT223)
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Collector-Base Voltage V
Collector-Emitter Voltage V
Emitter-Base Voltage V
Peak Pulse Current I
Continuous Collector Current I
Operating and Storage Temperature Range T
CBO
CEO
EBO
CM
C
j:Tstg
-400 V
-400 V
-5 V
-1 A
-0.5 A
-55 to +150 °C
THERMAL CHARACTERISTICS
PARAMETER SYMBOL VALUE UNIT
Total Power Dissipation at T
Any single die on
= 25°C*
amb
Both die on equally
Derate above 25°C*
Any single die on
Both die on equally
Thermal Resistance - Junction to Ambient*
Any single die on
Both die on equally
* The power which can be dissipated assuming the device is mounted in a typical manner
on a PCB with copper equal to 2 inches square.
P
tot
2.25
2.75
18
22
55.6
45.5
W
W
mW/ °C
mW/ °C
°C/ W
°C/ W
3 - 354 3 - 355
ZDT758
ELECTRICAL CHARACTERISTICS (at T
= 25°C unless otherwise stated).
amb
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base
Breakdown Voltage
Collector-Emitter
Breakdown Voltage
Emitter-Base
Breakdown Voltage
Collector Cutoff
Current
Collector Cutoff
Current
Emitter Cutoff Current I
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
Base-Emitter
Turn On Voltage
Static Forward Current
Transfer Ratio
Transition
Frequency
V
(BR)CBO
V
CEO(SUS)
V
(BR)EBO
I
CBO
I
CES
EBO
V
CE(sat)
V
BE(sat)
V
BE(on)
h
FE
f
T
-400 V
=-100µA
I
C
-400 V IC=-10mA*
-5 V
=-100µA
I
E
-100 nA VCB=-320V
-100 nA VCE=-320V
-100 nA VEB=-4V
-0.30
-0.25
-0.50
V
V
V
I
=-20mA, IB=-1mA
C
=-50mA, IB=-5mA*
I
C
=-100mA, IB=-10mA*
I
C
-0.9 V IC=-100mA, IB=-10mA*
-0.9 V IC=-100mA, VCE=-5V*
50
50
40
I
=-1mA, VCE=-5V
C
=-100mA, VCE=-5V*
I
C
I
=-200mA, VCE=-10V*
C
50 MHz IC=-20mA, VCE=-20V
f=20MHz
Output Capacitance C
Switching times t
obo
on
t
off
140
2000
*Measured under pulsed conditions. Pulse width=300
20 pF VCB=-20V, f=1MHz
ns
ns
µs. Duty cycle ≤ 2%
IC=-100mA, VC=-100V
=10mA, IB2=-20mA
I
B1
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