Zetex ZDT751 Datasheet

SM-8 DUAL PNP MEDIUM POWER
TRANSISTORS

ISSUE 1 - AUGUST 1997

ZDT751

C

1

C

1

C

2

C

2

B

1

E

1

B

2

E

2

SM-8

PARTMARKING DETAIL – T751

(8 LEAD SOT223)

ABSOLUTE MAXIMUM RATINGS.

PARAMETER SYMBOL VALUE UNIT
Collector-Base Voltage V
Collector-Emitter Voltage V
Emitter-Base Voltage V
Peak Pulse Current I
Continuous Collector Current I
Operating and Storage Temperature Range T

CBO

CEO

EBO

CM

C

j:Tstg

-80 V

-60 V

-5 V

-6 A

-2 A

-55 to +150 °C

THERMAL CHARACTERISTICS

PARAMETER SYMBOL VALUE UNIT
Total Power Dissipation at T

Any single die “on”
Both die “on” equally

Derate above 25°C*
Any single die “on”
Both die “on” equally

Thermal Resistance - Junction to Ambient*
Any single die “on”
Both die “on” equally

* The power which can be dissipated assuming the device is mounted in a typical manner
on a PCB with copper equal to 2 inches square.

= 25°C*

amb

P

tot

2.25

2.75

18
22

55.6

45.5

W
W

mW/ °C
mW/ °C

°C/ W
°C/ W

Zetex plc.
Fields New Road, Chadderton, Oldham, OL9-8NP, United Kingdom.
Telephone: [phone] (Sales), (44)161-627 4963 (General Enquiries)
Fax: [phone]

Zetex GmbH Zetex Inc. Zetex (Asia) Ltd. These are supported by
Streitfeldstraße 19 47 Mall Drive, Unit 4 3510 Metroplaza, Tower 2 agents and distributors in
D-81673 München Commack NY 11725 Hing Fong Road, major countries world-wide
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Telefon: [phone] Telephone: [phone] Telephone:[phone] Internet:
Fax: [phone] Fax: [phone] Fax: [phone] http://www.zetex.com

This publication is issued to provide outline information only which (unless a greed by the Company in writing) may n ot be used, applied
or reproduced for any purpose or form part of any order or cont rac t or be regarded as a repres entat ion rel ati ng to the product s or
services concerned. The Company reserves the right to alt er wit h out noti ce the s pecif icati on, design, price or conditions of supply of any
product or service.

Zetex plc 1997

ZDT751

ELECTRICAL CHARACTERISTICS (at T

= 25°C unless otherwise stated).

amb

PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.

Collector-Base
Breakdown Voltage

Collector-Emitter
Breakdown Voltage

Emitter-Base
Breakdown Voltage

Collector Cutoff
Current

Emitter Cutoff Current I

Collector-Emitter
Saturation Voltage

Base-Emitter
Saturation Voltage

Base-Emitter
Turn-On Voltage

Static Forward Current
Transfer Ratio

Transition Frequency f

V

(BR)CBO

V

(BR)CEO

V

(BR)EBO

I

CBO

EBO

V

CE(sat)

V

BE(sat)

V

BE(on)

h

FE

T

-80 V

I

=-100µA, IE=0

C

-60 V IC=-10mA, IB=0*

-5 V

-0.1

-10

-0.1

-0.15

-0.28

-0.3

-0.5VV

µA
µA

µA

I

=-100µA, IC=0

E

VCB=-60V
V

=-60V,T

CB

VEB=-4V, IE=0

IC=1A, IB=-100mA*
I

=2A, IB=-200mA*

C

-0.9 -1.25 V IC=1A, IB=-100mA*

-0.8 -1 V IC=-1A, VCE=-2V*

70
100
80
40

200
200
170
80

300

I

=-50mA, VCE=-2V*

C

I

=-500mA, VCE=-2V*

C

I

=-1A, VCE=-2V*

C

I

=-2A, VCE=-2V*

C

100 140 MHz IC=-100mA, VCE=-5V

f=100MHz

amb

=100°C

Output Capacitance C

Switching Times t

obo

on

t

off

40 ns IC=-500mA, VCC=-10V

450 ns

30 pF VCB=-10V f=1MHz

*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%

I

B1=IB2

=-50mA