Zetex ZDT717 Datasheet
SM-8 DUAL PNP MEDIUM POWER
HIGH GAIN TRANSISTORS
ISSUE 1 - NOVEMBER 1995
ZDT717
C
1
C
1
C
2
C
2
PARTMARKING DETAIL T717
B
1
E
1
B
2
E
2
SM-8
(8 LEAD SOT223)
ABSOLUTE MAXIMUM RATINGS.
PARAMET ER SYMBOL VALUE UNIT
Collector-Base Voltage V
Collector-Emitter Voltage V
Emitter-Base Voltage V
Peak Pulse Current I
Continuous Collector Current I
Operating and Storage Temperature Range T
CBO
CEO
EBO
CM
C
j:Tstg
-12 V
-12 V
-5 V
-10 A
-2.5 A
-55 to +150 °C
THERMAL CHARACTERISTICS
PARAMET ER SYMBOL VALUE UNIT
Total Power Dissipation at T
Any single die on
= 25°C*
amb
Both die on equally
Derate above 25°C*
Any single die on
Both die on equally
Thermal Resistance - Junction to Ambient*
Any single die on
Both die on equally
* The power which can be dissipated assuming the device is mounted in a typical manner
on a PCB with copper equal to 2 inches square.
P
tot
2
2.5
16
20
62.5
50
W
W
mW/ °C
mW/ °C
°C/ W
°C/ W
3 - 348 3 - 349
ZDT717
ELECTRICAL CHARACTERISTICS (at T
= 25°C unless otherwise stated).
amb
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base
Breakdown Voltage
Collector-Emitter
Breakdown Voltage
Emitter-Base
Breakdown Voltage
Collector Cutoff
Current
Emitter Cutoff
Current
Collector Emitter
Cutoff Current
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
Base-Emitter
Turn-On Voltage
Static Forward
Current Transfer
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
I
CES
V
CE(sat)
V
BE(sat)
V
BE(on)
h
FE
Ratio
Transition
Frequency
Output Capacitance C
Turn-On Time t
Turn-Off Time t
f
T
obo
on
off
*Measured under pulsed conditions. Pulse width=300
-12 -35 V
=-100µA
I
C
-12 -25 V IC=-10mA*
-5 -8.5 V
=-100µA
I
E
-100 nA VCB=-10V
-100 nA VEB=-4V
-10
-100
-110
-180
-100 nA V
mV
-17
mV
-140
mV
-170
mV
-220
=-10V
CES
I
=-0.1A, IB=-10mA*
C
I
=-1A, IB=-10mA*
C
=-1.5A, IB=-50mA*
I
C
I
=-2.5A, IB=-50mA*
C
-0.9 -1.0 V IC=-2.5A, IB=-50mA*
-0.8 -1.0 V IC=-2.5A, VCE=-2V*
300
300
180
60
45
475
450
275
100
70
I
=-10mA, VCE=-2V*
C
=-100mA, VCE=-2V*
I
C
I
=-2.5A, VCE=-2V*
C
=-8A, VCE=-2V*
I
C
I
=-10A, VCE=-2V*
C
80 110 MHz IC=-50mA, VCE=-10V
f=100MHz
21 30 pF VCB=-10V, f=1MHz
70 ns VCC=-6V, IC=-2A
=50mA
I
130 ns
µs. Duty cycle ≤ 2%
B1=IB2
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