Zetex ZDT694 Datasheet
SM-8 DUAL NPN MEDIUM POWER
HIGH GAIN TRANSISTORS
ISSUE 1 - NOVEMBER 1995
ZDT694
C
1
C
1
C
2
C
2
PARTMARKING DETAIL T694
B
1
E
1
B
2
E
2
SM-8
(8 LEAD SOT223)
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Collector-Base Voltage V
Collector-Emitter Voltage V
Emitter-Base Voltage V
Peak Pulse Current I
Continuous Collector Current I
Operating and Storage Temperature Range T
CBO
CEO
EBO
CM
C
j:Tstg
120 V
120 V
5V
1A
0.5 A
-55 to +150 °C
THERMAL CHARACTERISTICS
PARAMETER SYMBOL VALUE UNIT
Total Power Dissipation at T
Any single die on
= 25°C*
amb
Both die on equally
Derate above 25°C*
Any single die on
Both die on equally
Thermal Resistance - Junction to Ambient*
Any single die on
Both die on equally
* The power which can be dissipated assuming the device is mounted in a typical manner
on a PCB with copper equal to 2 inches square.
P
tot
2.25
2.75
18
22
55.6
45.5
W
W
mW/ °C
mW/ °C
°C/ W
°C/ W
3 - 342
ZDT694
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C).
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base Breakdown
Voltage
Collector-Emitter
Breakdown Voltage
Emitter-Base Breakdown
Voltage
Collector Cutoff Current I
Emitter Cutoff Current I
Collector-Emitter Saturation
Voltage
Base-Emitter
Saturation Voltage
Base-Emitter
Turn-On Voltage
Static Forward Current
Transfer Ratio
Transition Frequency f
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
CBO
EBO
V
CE(sat)
V
BE(sat)
V
BE(on)
h
FE
T
120 V
=100µA
I
C
120 V IC=10mA*
5V
0.1
µA
0.1
µA
0.25
0.5VV
=100µA
I
E
V
=100V
CB
=4V
V
EB
IC=0.1A, IB=0.5mA*
=0.4A, IB=5mA*
I
C
0.9 V IC=1A, IB=10mA*
0.9 V IC=1A, VCE=2V*
500
400
150
I
=100mA, VCE=2V*
C
=200mA, VCE=2V*
I
C
I
=400mA, VCE=2V*
C
130 MHz IC=50mA, VCE=5V
f=50MHz
Input Capacitance C
Output Capacitance C
Switching Times t
ibo
obo
on
t
off
*Measured under pulsed conditions. Pulse width=300
3 - 343
200 pF VEB=0.5V, f=1MHz
9pFV
80
nsnsIC=100mA, IB1=10mA
2900
µs. Duty cycle ≤ 2%
=10V, f=1MHz
CB
I
=10mA, VCC=50V
B2
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