Zetex ZDT690 Datasheet
SM-8 DUAL NPN MEDIUM POWER
C
1
C
1
C
2
C
2
HIGH GAIN TRANSISTORS
ISSUE 1 - NOVEMBER 1995
B
1
E
1
B
2
E
2
PARTMARKING DETAIL T690
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Collector-Base Voltage V
Collector-Emitter Voltage V
Emitter-Base Voltage V
Peak Pulse Current I
Continuous Collector Current I
Operating and Storage Temperature Range T
THERMAL CHARACTERISTICS
PARAMETER SYMBOL VALUE UNIT
Total Power Dissipation at T
Any single die on
Both die on equally
Derate above 25°C*
Any single die on
Both die on equally
Thermal Resistance - Junction to Ambient*
Any single die on
Both die on equally
* The power which can be dissipated assuming the device is mounted in a typical manner
on a PCB with copper equal to 2 inches square.
= 25°C*
amb
CBO
CEO
EBO
CM
C
j:Tstg
P
tot
ZDT690
SM-8
SM-8
(8 LEAD SOT223)
(8 LEAD SOT223)
45 V
45 V
5V
6A
2A
-55 to +150 °C
2.25
2.75
18
22
55.6
45.5
W
W
mW/ °C
mW/ °C
°C/ W
°C/ W
3 - 339
ZDT690
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C).
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base Breakdown
Voltage
Collector-Emitter
Breakdown Voltage
Emitter-Base Breakdown
Voltage
Collector Cutoff Current I
Emitter Cutoff Current I
Collector-Emitter Saturation
Voltage
Base-Emitter
Saturation Voltage
Base-Emitter
Turn-On Voltage
Static Forward Current
Transfer Ratio
Transition Frequency f
Input Capacitance C
Output Capacitance C
Switching Times t
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
CBO
EBO
V
CE(sat)
V
BE(sat)
V
BE(on)
h
FE
T
ibo
obo
on
t
off
*Measured under pulsed conditions. Pulse width=300
45 V
=100µA
I
C
45 V IC=10mA*
5V
0.1
µA
0.1
µA
0.1
0.5VV
=100µA
I
E
V
=35V
CB
V
=4V
EB
IC=0.1A, IB=0.5mA*
I
=1A, IB=5mA*
C
0.9 V IC=1A, IB=10mA*
0.9 V IC=1A, VCE=2V*
500
400
150
I
=100mA, VCE=2V*
C
I
=1A, VCE=2V*
C
=2A, VCE=2V*
I
C
150 MHz IC=50mA, VCE=5V
f=50MHz
200 pF VEB=0.5V, f=1MHz
16 pF VCB=10V, f=1MHz
33
1300
µs. Duty cycle ≤ 2%
nsnsIC=500mA, IB!=50mA
=50mA, VCC=10V
I
B2
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