Zetex ZDT6757 Datasheet
SM-8 COMPLEMENTARY MEDIUM POWER
PNP
TRANSISTORS
ISSUE 1 - NOVEMBER 1995
ZDT6757
C
1
C
1
C
2
C
2
PARTMARKING DETAIL T6757
B
1
NPN
E
1
B
2
E
2
SM-8
(8 LEAD SOT223)
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL NPN PNP UNIT
Collector-Base Voltage V
Collector-Emitter Voltage V
Emitter-Base Voltage V
Peak Pulse Current I
Continuous Collector Current I
Operating and Storage Temperature Range T
CBO
CEO
EBO
CM
C
j:Tstg
300 -300 V
300 -300 V
5-5 V
1-1 A
0.5 -0.5 A
-55 to +150 °C
THERMAL CHARACTERISTICS
PARAMET ER SYMBO L VALUE UNIT
Total Power Dissipation at T
Any single die on
= 25°C*
amb
Both die on equally
Derate above 25°C*
Any single die on
Both die on equally
Thermal Resistance - Junction to Ambient*
Any single die on
Both die on equally
* The power which can be dissipated assuming the device is mounted in a typical manner
on a PCB with copper equal to 2 inches square.
P
tot
2.25
2.75
18
22
55.6
45.5
W
W
mW/ °C
mW/ °C
°C/ W
°C/ W
3 - 378 3 - 379
ZDT6757
NPN TRANSISTOR
ELECTRICAL CHARACTERISTICS (at T
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base
Breakdown Voltage
Collector-Emitter
Breakdown Voltage
Emitter-Base
Breakdown Voltage
Collector Cutoff
Current
Emitter Cutoff Current I
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
Base-Emitter Turn-On
Voltage
Static Forward
Current Transfer Ratio
Transition
Frequency
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
EBO
V
CE(sat)
V
BE(sat)
V
BE(on)
h
FE
f
T
300 V
300 V IC=10mA, IB=0*
5V
50
40
30 MHz IC=10mA, VCE=20V
amb
= 25°C).
=100µA, I
I
C
=100µA, I
I
E
100 nA VCB=200V, IE=0
100 nA VEB=3V, IC=0
0.5 V IC=100mA, IB=10mA*
1VI
1VI
=100mA, IB=10mA*
C
=100mA, VCE=5V*
C
IC=100mA, VCE=5V
=10mA, VCE=5V
I
C
f=20MHz
=0
E
=0
C
Output Capacitance C
*Measured under pulsed conditions. Pulse width=300
obo
µs. Duty cycle ≤ 2%
For typical characteristics graphs see FZT657 datasheet.
20 pF VCB=20V, f=1MHz
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