Zetex ZDT6705 Datasheet
SM-8 COMPLEMENTARY MEDIUM POWER
DARLINGTON TRANSISTORS
ISSUE 1 - NOVEMBER 1995
ZDT6705
C
1
C
1
C
2
C
2
PARTMARKING DETAIL T6705
B
1
NPN
E
1
B
2
PNP
E
2
SM-8
(8 LEAD SOT223)
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL NPN PNP UNIT
Collector-Base Voltage V
Collector-Emitter Voltage V
Emitter-Base Voltage V
Peak Pulse Current I
Continuous Collector Current I
Operating and Storage Temperature Range T
CBO
CEO
EBO
CM
C
j:Tstg
140 -140 V
120 -120 V
10 -10 V
4-4 A
1-1 A
-55 to +150 °C
THERMAL CHARACTERISTICS
PARAMET ER SYMBO L VALUE UNIT
Total Power Dissipation at T
Any single die on
= 25°C*
amb
Both die on equally
Derate above 25°C*
Any single die on
Both die on equally
Thermal Resistance - Junction to Ambient*
Any single die on
Both die on equally
* The power which can be dissipated assuming the device is mounted in a typical manner
on a PCB with copper equal to 2 inches square.
P
tot
2.25
2.75
18
22
55.6
45.5
W
W
mW/ °C
mW/ °C
°C/ W
°C/ W
3 - 369 3 - 370
ZDT6705
NPN TRANSISTOR
ELECTRICAL CHARACTERISTICS (at T
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base
Breakdown Voltage
Collector-Emitter
Breakdown Voltage
Emitter-Base
Breakdown Voltage
Collector Cutoff
Current
Emitter Cutoff Current I
Colllector-Emitter
Cutoff Current
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
Base-Emitter
Turn-On Voltage
Static Forward
Current Transfer Ratio
Transition Frequency f
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
EBO
I
CES
V
CE(sat)
V
BE(sat)
V
BE(on)
h
FE
T
140 V
120 V IC=10mA*
10 V
2K
5K
2K
0.5K
150 MHz IC=100mA, VCE=10V
amb
= 25°C).
=100µA
I
C
=100µA
I
E
0.01
10
0.1
10
1.0
1.5
µA
µA
µA
µA
V
V
1.8 V IC=1A, IB=1mA*
1.7 V IC=1A, VCE=5V*
100K
=120V
V
CB
V
=120V,T
CB
V
=8V
EB
V
CES
IC=250mA, IB=0.25mA*
I
=1A, IB=1mA*
C
I
=50mA, VCE=5V
C
=500mA, VCE=5V*
I
C
I
=1A, VCE=5V*
C
=2A, VCE=5V*
I
C
f=20MHz
=120V
amb
=100°C
Input Capacitance C
Output Capacitance C
Switching Times t
ibo
obo
on
t
off
*Measured under pulsed conditions. Pulse width=300
90 pF VEB=500mV, f=1MHz
15 pF VCB=10V, f=1MHz
0.5
1.6
µs. Duty cycle ≤ 2%
For typical characteristics graphs see ZDT605 datasheet.
µs
µs
I
=500mA, VCE=10V
C
=0.5mA
I
B1=IB2
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