Zetex ZDT649 Datasheet
SM-8 DUAL NPN MEDIUM POWER
C
1
C
1
C
2
C
2
TRANSISTORS
ISSUE 1 - NOVEMBER 1995
B
1
E
1
B
2
E
2
PARTMARKING DETAIL T649
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Collector-Base Voltage V
Collector-Emitter Voltage V
Emitter-Base Voltage V
Peak Pulse Current I
Continuous Collector Current I
Operating and Storage Temperature Range T
THERMAL CHARACTERISTICS
PARAMETER SYMBOL VALUE UNIT
Total Power Dissipation at T
Any single die on
Both die on equally
Derate above 25°C*
Any single die on
Both die on equally
Thermal Resistance - Junction to Ambient*
Any single die on
Both die on equally
* The power which can be dissipated assuming the device is mounted in a typical manner
on a PCB with copper equal to 2 inches square.
= 25°C*
amb
CBO
CEO
EBO
CM
C
j:Tstg
P
tot
ZDT649
SM-8
(8 LEAD SOT223)
35 V
25 V
5V
6A
2A
-55 to +150 °C
2.25
2.75
18
22
55.6
45.5
W
W
mW/ °C
mW/ °C
°C/ W
°C/ W
3 - 333
ZDT649
ELECTRICAL CHARACTERISTICS (at T
= 25°C unless otherwise stated).
amb
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base
Breakdown Voltage
Collector-Emitter
Breakdown Voltage
Emitter-Base
Breakdown Voltage
Collector Cutoff
Current
Emitter Cutoff Current I
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
Base-Emitter
Turn-On Voltage
Static Forward Current
Transfer Ratio
Transition Frequency f
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
EBO
V
CE(sat )
V
BE(sat )
V
BE(on)
h
FE
T
35 V
=100µA
I
C
25 V IC=10mA*
5V
0.12
0.23
0.1
10
0.1
0.3
0.5
µA
µA
µA
V
V
=100µA
I
E
V
=30V
CB
V
=30V,T
CB
V
EB
amb
=4V
IC=1A, IB=100mA*
=2A, IB=200mA*
I
C
0.9 1.25 V IC=1A, IB=100mA*
0.8 1 V IC=1A, VCE=2V*
70
100
75
15
200
200
150
50
300
I
=50mA, VCE=2V*
C
=1A, VCE=2V*
I
C
I
=2A, VCE=2V*
C
=6A, VCE=2V*
I
C
150 240 MHz IC=100mA, VCE=5V
f=100MHz
=100°C
Output Capacitance C
Switching Times t
obo
on
t
off
25 50 pF VCB=10V f=1MHz
55 ns IC=500mA, VCC=10V
300 ns
*Measured under pulsed conditions. Pulse width=300
3 - 334 3 - 335
µ
s. Duty cycle ≤ 2%
I
B1=IB2
=50mA
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