Zetex ZDT619 Datasheet
SM-8 DUAL NPN MEDIUM POWER
HIGH GAIN TRANSISTORS
ISSUE 1 - NOVEMBER 1995
ZDT619
C
1
C
1
C
2
C
2
PARTMARKING DETAIL T619
B
1
E
1
B
2
E
2
SM-8
(8 LEAD SOT223)
ABSOLUTE MAXIMUM RATINGS.
PARAMET ER SYMBOL VALUE UNIT
Collector-Base Voltage V
Collector-Emitter Voltage V
Emitter-Base Voltage V
Peak Pulse Current I
Continuous Collector Current I
Operating and Storage Temperature Range T
CBO
CEO
EBO
CM
C
j:Tstg
50 V
50 V
5V
6A
2A
-55 to +150 °C
THERMAL CHARACTERISTICS
PARAMET ER SYMBOL VALUE UNIT
Total Power Dissipation at T
Any single die on
= 25°C*
amb
Both die on equally
Derate above 25°C*
Any single die on
Both die on equally
Thermal Resistance - Junction to Ambient*
Any single die on
Both die on equally
* The power which can be dissipated assuming the device is mounted in a typical manner
on a PCB with copper equal to 2 inches square.
P
tot
2
2.5
16
20
62.5
50
W
W
mW/ °C
mW/ °C
°C/ W
°C/ W
3 - 330 3 - 331
ZDT619
ELECTRICAL CHARACTERISTICS (at T
= 25°C unless otherwise stated).
amb
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base
Breakdown Voltage
Collector-Emitter
Breakdown Voltage
Emitter-Base
Breakdown Voltage
Collector Cutoff
Current
Emitter Cutoff Current I
Collector Emitter
Cutoff Current
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
Base-Emitter Turn-On
Voltage
Static Forward Current
Transfer Ratio
Transition
Frequency
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
EBO
I
CES
V
CE(sat)
V
BE(sat)
V
BE(on)
h
FE
f
T
50 190 V
=100µA
I
C
50 65 V IC=10mA*
58.3 V
=100µA
I
E
100 nA VCB=40V
100 nA VEB=4V
12
125
150
100 nA V
20
200
220
mV
mV
mV
=40V
CES
I
=0.1A, IB=10mA*
C
=1A, IB=10mA*
I
C
I
=2A, IB=50mA*
C
0.87 1.0 V IC=2A, IB=50mA*
0.80 1.0 V IC=2A, VCE=2V*
200
300
200
100
400
450
400
225
40
I
=10mA, VCE=2V*
C
=200mA, VCE=2V*
I
C
I
=1A, VCE=2V*
C
=2A, VCE=2V*
I
C
I
=6A, VCE=2V*
C
100 165 MHz IC=50mA, VCE=10V
f=100MHz
Output Capacitance C
Turn-On Time t
Turn-Off Time t
obo
on
off
12 20 pF VCB=10V, f=1MHz
170 ns VCC=10V, IC=1A
750 ns
*Measured under pulsed conditions. Pulse width=300
µs. Duty cycle ≤ 2%
=-IB2=10mA
I
B1
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