Zetex ZDT617 Datasheet

SM-8 DUAL NPN MEDIUM POWER

C

1

C

1

C

2

C

2

HIGH GAIN TRANSISTORS

ISSUE 1 - NOVEMBER 1995

B

1

E

1

B

2

E

2

PARTMARKING DETAIL  T617

ABSOLUTE MAXIMUM RATINGS.

PARAMETER SYMBOL VALUE UNIT

Collector-Base Voltage V

Collector-Emitter Voltage V

Emitter-Base Voltage V

Peak Pulse Current I

Continuous Collector Current I

Operating and Storage Temperature Range T

THERMAL CHARACTERISTICS

PARAMETER SYMBOL VALUE UNIT

Total Power Dissipation at T
Any single die on
Both die on equally

Derate above 25°C*
Any single die on
Both die on equally

Thermal Resistance - Junction to Ambient*
Any single die on
Both die on equally

* The power which can be dissipated assuming the device is mounted in a typical manner
on a PCB with copper equal to 2 inches square.

= 25°C*

amb

CBO

CEO

EBO

CM

C

j:Tstg

P

tot

ZDT617

SM-8

(8 LEAD SOT223)

15 V

15 V

5V

12 A

3A

-55 to +150 °C

2

2.5

16
20

62.5
50

W
W

mW/ °C
mW/ °C

°C/ W
°C/ W

3 - 327

ZDT617 ZDT617

ELECTRICAL CHARACTERISTICS (at T

= 25°C unless otherwise stated).

amb

PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.

Collector-Base
Breakdown Voltage

Collector-Emitter
Breakdown Voltage

Emitter-Base
Breakdown Voltage

Collector Cutoff
Current

Emitter Cutoff
Current

Collector-Emitter
Cutoff Current

Collector-Emitter
Saturation Voltage

Base-Emitter
Saturation Voltage

Base-Emitter
Turn-On Voltage

Static Forward
Current Transfer

V

(BR)CBO

V

(BR)CEO

V

(BR)EBO

I

CBO

I

EBO

I

CES

V

CE(sat)

V

BE(sat)

V

BE(on)

h

FE

Ratio

Transition
Frequency

Output Capacitance C

Turn-On Time t

Turn-Off Time t

f

T

obo

on

off

*Measured under pulsed conditions. Pulse width=300

15 70 V

=100µA

I

C

15 18 V IC=10mA*

58.2 V

=100µA

I

E

100 nA VCB=10V

100 nA VEB=4V

8
70
150

100 nA V

mV

14

mV

100

mV

200

=10V

CES

I

=0.1A, IB=10mA*

C

I

=1A, IB=10mA*

C

=3A, IB=50mA*

I

C

0.9 1.0 V IC=3A, IB=50mA*

0.84 1.0 V IC=3A, VCE=2V*

200
300
200
150

415
450
320
240
80

I

=10mA, VCE=2V*

C

I

=200mA, VCE=2V*

C

=3A, VCE=2V*

I

C

I

=5A, VCE=2V*

C

=12A, VCE=2V*

I

C

80 120 MHz IC=50mA, VCE=10V

f=100MHz

30 40 pF VCB=10V, f=1MHz

120 ns VCC=10V, IC=3A

I

=50mA

160 ns

µs. Duty cycle ≤ 2%

B1=IB2

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