Zetex ZDT1147 Datasheet
SM-8 DUAL PNP MEDIUM POWER
SM-8
(8 LEAD SOT223)
HIGH GAIN TRANSISTORS
ISSUE 1 - AUGUST 1997
B
C
1
C
1
C
2
C
2
PARTMARKING DETAIL – ZDT1147
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Collector-Base Voltage V
Collector-Emitter Voltage V
Emitter-Base Voltage V
Peak Pulse Current I
Continuous Collector Current I
Base Current I
Operating and Storage Temperature Range T
THERMAL CHARACTERISTICS
PARAMETER SYMBOL VALUE UNIT
Total Power Dissipation at T
Any single die “on”
Both die “on” equally
Derate above 25°C*
Any single die “on”
Both die “on” equally
Thermal Resistance - Junction to Ambient*
Any single die “on”
Both die “on” equally
* The power which can be dissipated assuming the device is mounted in a typical manner
on a PCB with copper equal to 2 inches square.
= 25°C*
amb
1
E
1
B
2
E
2
CBO
CEO
EBO
CM
C
B
j:Tstg
P
tot
ZDT1147
-15 V
-12 V
-5 V
-20 A
-5 A
-500 mA
-55 to +150 °C
2.0
2.75
18
22
55.6
45.5
W
W
mW/ °C
mW/ °C
°C/ W
°C/ W
ZDT1147
ELECTRICAL CHARACTERISTICS (at T
= 25°C unless otherwise stated).
amb
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base Breakdown
Voltage
Collector-Emitter
Breakdown Voltage
Collector-Emitter
Breakdown Voltage
Collector-Emitter
Breakdown Voltage
Emitter-Base Breakdown
Voltage
Collector Cutoff Current I
Emitter Cutoff Current I
Collector Emitter Cutoff
Current
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
Base-Emitter Turn-On
Voltage
Static Forward Current
Transfer Ratio
Transition Frequency f
Output Capacitance C
Switching Times
V
(BR)CBO
V
CES
V
CEO
V
CEV
V
(BR)EBO
CBO
EBO
I
CES
V
CE(sat)
V
BE(sat)
V
BE(on)
h
FE
T
CB
t
on
t
off
-15 -35 V
-12 -25 V
=-100µA
I
C
=-100µA
I
C
-12 -25 V IC=-10mA
-12 -25 V
-5 -8.5 V
=-100µA, VEB=+1V
I
C
=-100µA
I
E
-0.3 -100 nA VCB=-12V
-0.3 -100 nA VEB=-4V
-0.3 -100 nA V
-25
-70
-90
-115
-250
-50
-110
-130
-170
-380
mV
mV
mV
mV
mV
=-10V
CES
IC=-0.1A, IB=-1mA*
=-0.5A, IB=-2.5mA*
I
C
=-1A, IB=-6mA*
I
C
=-2A, IB=-20mA*
I
C
I
=-5A, IB=-50mA*
C
-950 -1050 mV IC=-5A, IB=-50mA*
-905 -1000 mV IC=-5A, VCE=-2V*
270
250
200
150
90
450
400
340
250
160
60
850
=-10mA, VCE=-2V*
I
C
=-0.5A, VCE=-2V*
I
C
=-2A, VCE=-2V*
I
C
=-5A, VCE=-2V*
I
C
=-10A, VCE=-2V*
I
C
=-20A, VCE=-2V*
I
C
115 MHz IC=-50mA, VCE=-10V
f=50MHz
80 pF VCB=-10V, f=1MHz
150 ns IC=-4A, IB=-40mA, VCC=-10V
220 ns
=-4A, IB=±40mA,
I
C
=-10V
V
CC
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%
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