Zetex ZDT1053 Datasheet

SM-8 DUAL NPN MEDIUM POWER
HIGH GAIN TRANSISTORS

ISSUE 2 - APRIL 2000

ZDT1053

C

1

C

1

C

2

C

2

PARTMARKING DETAIL  T1053

B

1

E

1

B

2

E

2

SM-8

(8 LEAD SOT223)

ABSOLUTE MAXIMUM RATINGS.

PARAMET ER SYMBOL VALUE UNIT

Collector-Base Voltage V

Collector-Emitter Voltage V

Emitter-Base Voltage V

Peak Pulse Current I

Continuous Collector Current I

Base Current I

Operating and Storage Temperature Range T

CBO

CEO

EBO

CM

C

B

j:Tstg

150 V

75 V

5V

20 A

5A

500 mA

-55 to +150 °C

THERMAL CHARACTERISTICS

PARAMET ER SYMBOL VALUE UNIT

Total Power Dissipation at T
Any single die on

= 25°C*

amb

Both die on equally

Derate above 25°C*
Any single die on
Both die on equally

Thermal Resistance - Junction to Ambient*
Any single die on
Both die on equally

* The power which can be dissipated assuming the device is mounted in a typical manner
on a PCB with copper equal to 2 inches square.

P

tot

2.25

2.75

18
22

55.6

45.5

W
W

mW/ °C
mW/ °C

°C/ W
°C/ W

3 - 363 3 - 364

ZDT1053

ELECTRICAL CHARACTERISTICS (at T

= 25°C unless otherwise stated).

amb

PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.

Collector-Base
Breakdown Voltage

Collector-Emitter
Breakdown Voltage

Collector-Emitter
Breakdown Voltage

Collector-Emitter
Breakdown Voltage

Emitter-Base
Breakdown Voltage

Collector Cutoff Current I

Emitter Cutoff Current I

Collector Emitter Cutoff
Current

Collector-Emitter Saturation
Voltage

Base-Emitter
Saturation Voltage

Base-Emitter Turn-On
Voltage

Static Forward Current
Transfer Ratio

Transition Frequency f

Output Capacitance C

Switching Times

V

(BR)CBO

V

CES

V

CEO

V

CEV

V

(BR)EBO

CBO

EBO

I

CES

V

CE(sat)

V

BE(sat)

V

BE(on)

h

FE

T

obo

t

on

t

off

150 245 V

150 245 V

I

=100µA

C

=100µA

I

C

75 100 V IC=10mA

150 245 V

58.8 V

I

=100µA, V

C

I

=100µA

E

0.3 10 nA VCB=120V

0.3 10 nA VEB=4V

0.3 10 nA V

17
70
120
150
300

25
100
150
200

440

mV
mV
mV
mV
mV

=120V

CES

IC=0.2A, IB=20mA*

=1A, IB=50mA*

I

C

I

=1A, IB=10mA*

C

I

=2A, IB=50mA*

C

I

=5A, IB=250mA*

C

1100 1200 mV IC=5A, IB=250mA*

1000 1100 mV IC=5A, VCE=2V*

260
300
150
30

420
450
220
50
15

1200

IC=10mA, VCE=2V*
I

=1A, VCE=2V*

C

I

=2A, VCE=2V*

C

I

=5A, VCE=2V*

C

=10A, VCE=2V*

I

C

140 MHz IC=50mA, VCE=10V

f=100MHz

21 30 pF VCB=10V, f=1MHz

90 ns IC=2A, IB=20mA, VCC=50V

750 ns

I

C

=2A, I

=±20mA, V

B

=1V

EB

=50V

CC

*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2%