Zetex ZDT1048 Datasheet
SM-8 DUAL NPN MEDIUM POWER
C
1
C
1
C
2
C
2
HIGH GAIN TRANSISTORS
ISSUE 2 - FEBRUARY 1996
B
1
E
1
B
2
E
2
PARTMARKING DETAIL T1048
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Collector-Base Voltage V
Collector-Emitter Voltage V
Emitter-Base Voltage V
Peak Pulse Current I
Continuous Collector Current I
Base Current I
Operating and Storage Temperature Range T
THERMAL CHARACTERISTICS
PARAMETER SYMBOL VALUE UNIT
Total Power Dissipation at T
Any single die on
Both die on equally
Derate above 25°C*
Any single die on
Both die on equally
Thermal Resistance - Junction to Ambient*
Any single die on
Both die on equally
* The power which can be dissipated assuming the device is mounted in a typical manner
on a PCB with copper equal to 2 inches square.
= 25°C*
amb
CBO
CEO
EBO
CM
C
B
j:Tstg
P
tot
ZDT1048
SM-8
(8 LEAD SOT223)
50 V
17.5 V
5V
20 A
5A
500 mA
-55 to +150 °C
2.25
2.75
18
22
55.6
45.5
W
W
mW/ °C
mW/ °C
°C/ W
°C/ W
3 - 357
ZDT1048
ELECTRICAL CHARACTERISTICS (at T
= 25°C unless otherwise stated).
amb
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base Breakdown
Voltage
Collector-Emitter
Breakdown Voltage
Collector-Emitter
Breakdown Voltage
Collector-Emitter
Breakdown Voltage
Emitter-Base Breakdown
Voltage
Collector Cutoff Current I
Emitter Cutoff Current I
Collector Emitter Cutoff
Current
Collector-Emitter Saturation
Voltage
Base-Emitter
Saturation Voltage
Base-Emitter Turn-On
Voltage
Static Forward Current
Transfer Ratio
Transition Frequency f
Output Capacitance C
Switching Times
V
(BR)CBO
V
CES
V
CEO
V
CEV
V
(BR)EBO
CBO
EBO
I
CES
V
CE(sat)
V
BE(sat)
V
BE(on)
h
FE
T
obo
t
on
t
off
50 85 V
50 85 V
I
=100µA
C
I
=100µA
C
17.5 24 V IC=10mA
50 85 V
58.7 V
I
=100µA, V
C
I
=100µA
E
0.3 10 nA VCB=35V
0.3 10 nA VEB=4V
0.3 10 nA V
27
55
120
200
200
45
75
160
240
300
mV
mV
mV
mV
mV
=35V
CES
I
=0.5A, IB=10mA*
C
=1A, IB=10mA*
I
C
I
=2A, IB=10mA*
C
=5A, IB=100mA*
I
C
I
=5A, IB=50mA*
C
1000 1100 mV IC=5A, IB=100mA*
900 1000 mV IC=5A, VCE=2V*
280
300
300
250
50
440
450
450
300
80
1200
IC=10mA, VCE=2V*
=0.5A, VCE=2V*
I
C
I
=1A, VCE=2V*
C
I
=5A, VCE=2V*
C
I
=20A, VCE=2V*
C
150 MHz IC=50mA, VCE=10V
f=50MHz
60 80 pF VCB=10V, f=1MHz
120 ns IC=4A, IB=40mA, VCC=10V
250 ns
I
C
=4A, I
=±40mA, V
B
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%
=1V
EB
=10V
CC
Loading...