Zetex ZDM4306N Datasheet
SM-8 DUAL N-CHANNEL ENHANCEMENT
D
1
D
1
D
2
D
2
MODE MOSFETS
ISSUE 1 - NOVEMBER 1995
G
1
S
1
G
2
S
2
PARTMARKING DETAIL – M4306N
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Drain-Source Voltage V
Continuous Drain Current at T
Pulsed Drain Current I
Gate-Source Voltage V
Operating and Storage Temperature Range T
=25°C I
amb
THERMAL CHARACTERISTICS
PARAMETER SYMBOL VALUE UNIT
Total Power Dissipation at T
Any single die “on”
Both die “on” equally
Derate above 25°C*
Any single die “on”
Both die “on” equally
Thermal Resistance - Junction to Ambient*
Any single die “on”
Both die “on” equally
* The power which can be dissipated assuming the device is mounted in a typical manner on a PCB
with copper equal to 2 inches square.
= 25°C*
amb
DS
D
DM
GS
j:Tstg
P
tot
ZDM4306N
SM-8
(8 LEAD SOT223)
60 V
2A
15 A
± 20
-55 to +150 °C
2.5
3.0
20
24
50.0
41.6
V
W
W
mW/ °C
mW/ °C
°C/ W
°C/ W
Note:
This data is derived from development material and does not necessarily mean that the device will
go into production
3 - 321
ZDM4306N
ELECTRICAL CHARACTERISTICS (at T
= 25°C unless otherwise stated).
amb
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Drain-Source
Breakdown Voltage
Gate-Source Threshold
Voltage
Gate-Body Leakage I
Zero Gate Voltage Drain
Current
On-State Drain
Current(1)
Static Drain-Source
On-State Resistance (1)
Forward
Transconductance (1)(2)
Input Capacitance (2) C
Common Source Output
Capacitance (2)
Reverse Transfer
Capacitance (2)
Turn-On Delay Time
(2)(3)
Rise Time (2)(3) t
BV
V
GSS
I
DSS
I
D(on)
R
g
fs
iss
C
oss
C
rss
t
d(on)
r
DSS
GS(th)
DS(on)
60 V ID=1mA, VGS=0V
1.3 3 V ID=1mA, VDS= V
100 nA
10
100
µA
µA
V
=± 20V, VDS=0V
GS
VDS=60V, VGS=0
V
=48V, VGS=0V, T=125°C(2)
DS
12 A VDS=10V, VGS=10V
0.22
0.32
0.33
0.45
Ω
Ω
VGS=10V,ID=3A
V
=5V, ID=1.5A
GS
700 mS VDS=25V,ID=3A
350 pF
140 pF VDS=25 V, VGS=0V, f=1MHz
30 pF
8ns
V
≈25V, V
25 ns
DD
GS
=10V, ID=3A
GEN
Turn-Off Delay Time
(2)(3)
Fall Time (2)(3) t
t
d(off)
f
30 ns
16 ns
1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤2%
(2) Sample test.
(3) Switching times measured with 50Ω source impedance and <5ns rise time on a pulse generator
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