Zetex ZDM4206N Datasheet
SM-8 DUAL N-CHANNEL ENHANCEMENT
D
1
D
1
D
2
D
2
MODE AVALANCHE RATED MOSFET
ISSUE 1 - NOVEMBER 1995
G
1
S
1
G
2
S
2
PARTMARKING DETAIL – M4206N
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Drain-Source Voltage V
Continuous Drain Current at T
=25°C I
amb
Pulsed Drain Current I
Gate-Source Voltage V
Continuous Body Diode Current at T
=25°C I
amb
Avalanche Current – Repetitive I
Avalanche Energy – Repetitive E
Operating and Storage Temperature Range T
DS
D
DM
GS
SD
AR
AR
j:Tstg
ZDM4206N
SM-8
(8 LEAD SOT223)
60 V
1A
8A
± 20
1A
600 mA
15 mJ
-55 to +150 °C
V
THERMAL CHARACTERISTICS
PARAMETER SYMBOL VALUE UNIT
Total Power Dissipation at T
Any single die “on”
Both die “on” equally
Derate above 25°C*
Any single die “on”
Both die “on” equally
Thermal Resistance - Junction to Ambient*
Any single die “on”
Both die “on” equally
* The power which can be dissipated assuming the device is mounted in a typical manner on a PCB
with copper equal to 2 inches square.
= 25°C*
amb
3 - 317
P
tot
2.25
2.75
18
22
55.6
45.5
W
W
mW/ °C
mW/ °C
°C/ W
°C/ W
ZDM4206N
ELECTRICAL CHARACTER ISTI CS (at T
= 25°C unless otherwise stated).
amb
PARAMETER SYMBOL MIN. MAX. UNIT CONDITIONS.
Drain-Source Breakdown
Voltage
Gate-Source Threshold Voltage V
Gate-Body Leakage I
Zero Gate Voltage Drain Current I
On-State Drain Current(1) I
Static Drain-Source On-State
Resistance (1)
Forward Transconductance(1)(2) g
Input Capacitance (2) C
Common Source Output
Capacitance (2)
Reverse Transfer Capacitance (2) C
Turn-On Delay Time (2)(3) t
Rise Time (2)(3) t
Turn-Off Delay Time (2)(3) t
Fall Time (2)(3) t
BV
GSS
DSS
D(on)
R
C
d(on)
r
d(off)
f
DSS
GS(th)
DS(on)
fs
iss
oss
rss
60 V ID=1mA, VGS=0V
1.3 3 V ID=1mA, VDS= V
100 nA
10
100
3AV
1
1.5
µA
µA
Ω
Ω
V
=± 20V, VDS=0V
GS
VDS=60V, VGS=0
V
=48V, VGS=0V, T=125°C(2)
DS
=25V, VGS=10V
DS
VGS=10V,ID=1.5A
V
=5V,ID=0.5A
GS
300 mS VDS=25V,ID=1.5A
100 pF
60 pF VDS=25V, VGS=0V, f=1MHz
20 pF
8ns
12 ns
V
≈25V, ID=1.5A,V
DD
12 ns
15 ns
GS
GEN
(1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤2%
(2) Sample test.
(3) Switching times measur ed wit h 50 Ω source impedance and <5ns rise time on a pulse
generator
TYPICAL CHARACTERISTICS
=10V
10
10
8
8
6
6
4
4
2
2
- Drain Current (Amps)
- Drain Current (Amps)
D
D
I
I
0
0
V
GS=
V
GS=
20V
20V
16V
16V
14V
14V
12V
12V
010 20 304050
010 20 304050
V
DS
- Drain Source Voltage (Volts)
V
DS
- Drain Source Voltage (Volts)
Output Characteristics
Output Characteristics
10V
10V
9V
9V
8V
8V
7V
7V
6V
6V
5V
5V
4.5V
4.5V
4V
4V
3.5V
3.5V
3 - 318
10
10
8
8
Amps)
Amps)
6
6
(
(
nt
nt
e
e
r
r
4
4
2
2
rain Cur
rain Cur
D
D
-
-
D
D
I
I
0
0
246810
246810
V
DS
- Drain Source Voltage (Volts)
V
DS
- Drain Source Voltage (Volts)
Saturation Characteristics
Saturation Characteristics
V
V
20V
20V
16V
16V
14V
14V
12V
12V
10V
10V
9V
9V
8V
8V
7V
7V
6V
6V
5V
5V
4.5V
4.5V
3.5V
3.5V
GS=
GS=
4V
4V
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