Zetex ZC930TA, ZC931TA, ZC932TA, ZC933ATA, ZC933TA Datasheet
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ZC930, ZMV930, ZV931 series
SILICON 12V HYPERABRUPT VARACTOR DIODES
Device Description
A range of silicon varactor diodes for use in frequency control and
filtering. Featuring closely controlled CV characteristics and high Q. Low
reverse current ensures very low phase noise performance. Available in
single or dual common cathode format in a wide rage of miniature
surface mount packages.
Features
Close tolerance C-V characteristics
·
Octave tuning from 0 to 6V
·
Low I
·
· Excellent phase noise performance
· High Q
· Range of miniature surface mount packages
Applications
· VCXO and TCXO
· Wireless communications
· Pagers
·
(typically 200pA)
R
Mobile radio
ISSUE 6 - JANUARY 2002
1
ZC930, ZMV930, ZV931 series
TUNING CHARACTERISTICS at Tamb = 25°C
PART Capacitance
=1V
V
R
Capacitance
VR=2.5V
MIN pF MIN pF MAX pF MAX pF
930 8.70 4.30 5.50 2.90 200
931 13.50 6.50 7.80 4.00 300
932 17.00 8.50 10.50 5.50 200
933 42.00 18.00 27.00 12.00 150
933A 42.00 20.25 24.75 12.00 150
934 95.00 40.00 65.00 25.00 80
934A 95.00 47.25 57.75 25.00 80
Capacitance
VR=4V
Minimum Q
VR=4V
f=50MHz
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL MAX UNIT
Reverse voltage V
Forward current I
Power dissipation at T
Power dissipation at T
Power dissipation at T
=25⬚C SOT23 P
amb
=25⬚C SOD323 P
amb
=25⬚C SOD523 P
amb
R
F
tot
tot
tot
12 V
100 mA
330 mW
330 mW
250 mW
Operating and storage temperature range -55 to +150 ⬚C
ELECTRICAL CHARACTERISTICS at Tamb = 25°C
PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
Reverse breakdown voltage I
Reverse voltage leakage V
Temperature coefficient of capacitance V
= 10uA 12 V
R
= 8V 0.2 100 nA
R
=3V,f=1MHz 300 400 ppCm/⬚C
R
ISSUE 6 - JANUARY 2002
2
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