Zetex ZC834ATA, ZC834BTA, ZC835ATA, ZC835BTA, ZC836ATA Datasheet
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SILICON 28V HYPERABRUPT VARACTOR DIODES
ZC829, ZDC833, ZMV829, ZMDC830, ZV831 Series
Device Description
A rangeof siliconvaractor diodesfor usein frequencycontrol and
filtering. Featuring closely controlled CV characteristics and high
Q. Low reverse current ensures very low phase noise
performance. Available in single or dual common cathode format
in a wide rage of miniature surface mount packages.
Features
Close tolerance C-V characteristics
·
· High tuning ratio
· Low I
· Excellent phase noise performance
· High Q
· Range of miniature surface mount packages
(typically 200pA)
R
830 series
Applications
·
VCXO and TCXO
·
Wireless communications
·
Pagers
·
Mobile radio
*Where steeper CV slopes are required there is the 12V hyperabrupt range.
ZC930, ZMV930, ZV930, ZV931 Series
ISSUE 6 - JANUARY 2002
1
830 series
TUNING CHARACTERISTICS at Tamb = 25°C
PART
Capacitance (pF)
=2V, f=1MHz
V
R
MIN. NOM. MAX. MIN. MAX.
829A 7.38 8.2 9.02 250 4.3 5.8
829B 7.79 8.2 8.61 250 4.3 5.8
830A 9.0 10.0 11.0 300 4.5 6.0
830B 9.5 10.0 10.5 300 4.5 6.0
831A 13.5 15.0 16.5 300 4.5 6.0
831B 14.25 15.0 15.75 300 4.5 6.0
832A 19.8 22.0 24.2 200 5.0 6.5
832B 20.9 22.0 23.1 200 5.0 6.5
833A 29.7 33.0 36.3 200 5.0 6.5
833B 31.35 33.0 34.65 200 5.0 6.5
834A 42.3 47.0 51.7 200 5.0 6.5
834B 44.65 47.0 49.35 200 5.0 6.5
835A 61.2 68.0 74.8 100 5.0 6.5
835B 64.6 68.0 71.4 100 5.0 6.5
836A 90.0 100.0 110.0 100 5.0 6.5
836B 95.0 100.0 105.0 100 5.0 6.5
Min Q
V
=3V
R
f=50MHz
Capacitance Ratio
at f=1MHz
C
2/C20
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL MAX UNIT
Forward current I
Power dissipation at T
Power dissipation at T
Power dissipation at T
=25⬚C SOT23 P
amb
=25⬚C SOD323 P
amb
=25⬚C SOD523 P
amb
F
tot
tot
tot
200 mA
330 mW
330 mW
250 mW
Operating and storage temperature range -55 to +150 ⬚C
ELECTRICAL CHARACTERISTICS at Tamb = 25°C
PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
Reverse breakdown voltage I
Reverse voltage leakage V
Temperature coefficient of capacitance V
= 10uA 25 V
R
= 20V 0.2 20 nA
R
= 3V, f = 1MHz 300 400 ppCm/⬚C
R
ISSUE 6 - JANUARY 2002
2
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