Zetex SXTA92 Datasheet
SOT89 PNP SILICON PLANAR
HIGH VOLTAGE TRANSISTOR
ISSUE 3 JANUARY 1996 ✪
SXTA92
COMPLEMENTARY TYPE SXTA42
C
PARTMARKING DETAIL S2D
B
SOT89
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Collector-Base Voltage V
Collector-Emitter Voltage V
Emitter-Base Voltage V
Continuous Collector Current I
Power Dissipation at T
=25°C P
amb
Operating and Storage Temperature Range T
ELECTRICAL CHARACTERISTICS (at T
amb
CBO
CEO
EBO
C
tot
j:Tstg
= 25°C).
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base
Breakdown Voltage
Collector-Emitter
Breakdown Voltage
Emitter-Base
Breakdown Voltage
Collector Cut-Off
Current
Emitter Cut-Off Current I
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
Static Forward Current
Transfer Ratio
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
EBO
V
CE(sat)
V
BE(sat)
h
FE
-300 V
-300 V IC=-1mA, IB=0*
-5 V
-0.25
-0.1
-0.5 V IC=-20mA, IB=-2mA*
-0.9 V IC=-20mA, IB=-2mA*
25
40
25
Transition
Frequency
Output Capacitance C
*Measured under pulsed conditions. Pulse width=300
For typical characteristics graphs see FMMTA92 datasheet.
f
T
obo
50 MHz IC=-10mA, VCE=-20V
6pFV
µs. Duty cycle ≤2%
-300 V
-300 V
-6 V
-500 mA
1W
-65 to +150 °C
=-100µA, I
I
C
=-100µA, I
I
E
V
µA
µA
=-200V, IE=0
CB
V
=-3V, IC=0
EB
=-1mA, VCE=-10V*
I
C
=-10mA, VCE=-10V*
I
C
=-30mA, VCE=-10V*
I
C
f=20MHz
=-20V, f=1MHz
CB
=0
E
=0
C
E
C
3 - 307
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